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On Radioactivity–Exposed Nanophotodetector Optoreliability
Emmanuel A. Anagnostakis
J. Mod. Phys.
Vol.2 No.7, July 29, 2011
DOI:
10.4236/jmp.2011.27089
(PDF 366K)
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On a Predictive Scheme of Slow Photoconductive Gain Evolution in Epitaxial Layer/Substrate Optoelectronic Nanodevices
G. E. Zardas,
C. J. Aidinis,
E. A. Anagnostakis,
Ch. I. Symeonides
Open J. Microphys.
Vol.1 No.2, August 30, 2011
DOI:
10.4236/ojm.2011.12006
(PDF 238K)
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Optoelectronic Properties of GaN-Based Light-Emitting Diodes with Different Mesa Structures
Xueyun Song,
Xianghua Zeng,
Junbin Zhang,
Yuzhe Jin,
Xiangdong Meng
Mater. Sci. Appl.
Vol.3 No.12, December 13, 2012
DOI:
10.4236/msa.2012.312122
(PDF 436K)
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A New Approach for Heavy
N
-Doping Process in Ge Epilayers Using Specific Solid Source
Luong Thi Kim Phuong
Opt. Photonics J.
Vol.8 No.2, February 11, 2018
DOI:
10.4236/opj.2018.82002
(PDF 1371K)
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Effect of Annealing on Structural, Morphological, Electrical and Optical Studies of Nickel Oxide Thin Films
Vikas Patil Patil,
Shailesh Pawar,
Manik Chougule,
Prasad Godse,
Ratnakar Sakhare,
Shashwati Sen,
Pradeep Joshi
J. Surf. Eng. Mater. Adv. Technol.
Vol.1 No.2, July 21, 2011
DOI:
10.4236/jsemat.2011.12006
(PDF 679K)
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