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 CSTA  Vol.9 No.1 , February 2020
Investigation of Inhomogeneity in Single Crystal SiC Wafers Using C-Scan Acoustic Scanning Microscopy
Abstract: In this work, C-Scan Acoustic Scanning Microscopy (ASM) is used to map the defects of three SiC samples. The acoustic images indicate that numerous defects with different shapes and area sexist in the wafers. Some of the defects have areas of more than 100,000 μm2. The number of defects ranges from 1 to 50 defects/wafer. Defect mapping is essential for defect repairing or avoidance. This work shows that ASM can locate the precise positions of the crystallographic defects, which enables defects repair and yield enhancement.
Cite this paper: Abdel-Motaleb, I. (2020) Investigation of Inhomogeneity in Single Crystal SiC Wafers Using C-Scan Acoustic Scanning Microscopy. Crystal Structure Theory and Applications, 9, 1-11. doi: 10.4236/csta.2020.91001.
References

[1]   Niina, T., Ohta, K., Nakata, T., Matsushita, Y., Uetani, T. and Fujikawa, Y. (1993) Light Emitting Diode Device and Method for Producing Same. US Patent No. 5187547.

[2]   Edmond, J.A. and Suvorov, A.V. (1997) Method of Forming Green Light Emitting Diode in Silicon Carbide. US Patent No. 5604135.

[3]   Chiu, C.-C., Chen, C.-L. and Shih, K.-K. (2003) High Efficiency White Light Emitting Diode. US Patent No. 6614172B2.

[4]   Zhang, Q., Callanan, R., Das, M.K., Ryu, S.-H., Agarwal, A.K. and Palmour, J.W. (2010) SiC Power Devices for Microgrids. IEEE Transaction on Power Electronics, 25, 2829-2896.
https://doi.org/10.1109/TPEL.2010.2079956

[5]   Ostling, M., Ghandi, R. and Zetterling, C.-M. (2011) SiC Power Devices-Present Status, Applications and Future Perspective. Proceedings IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, San Diego, CA, 23-26 May 2011.
https://doi.org/10.1109/ISPSD.2011.5890778

[6]   Thakkallapally, R., Veesam, V., Abdel-Motaleb, I. and Shen, Z. (2014) One-Directional 3D-SiC MESFET for High Power Applications. Proceedings of the IEEE National Aerospace and Electronic Conference, Dayton, OH, 24-27 June 2014.
https://doi.org/10.1109/NAECON.2014.7045766

[7]   Veesam, V., Thakkallapally, R., Abdel-Motaleb, I. and Shen, Z. (2015) Evaluation of Electric Field and Temperature of 3D SiC/Si Normally-off MOSFET for High Power High Speed Applications. Proceedings of the IEEE Electro-Information Technology IEEE-EIT, Naperville, IL, 21-23 May 2015.
https://doi.org/10.1109/NAECON.2014.7045767

[8]   Thakkallapally, R., Veesam, V., Abdel-Motaleb, I. and Shen, Z. (2015) Electrical and Thermal Analysis of Vertical Unidirectional 3C-SiC MESFETs on Silicon Substrate. Proceedings of the IEEE Electro-Information Technology IEEE-EIT, Naperville, IL, 21-23 May 2015.
https://doi.org/10.1109/EIT.2015.7293416

[9]   Henry, H.G., Augustine, G., DeSalvo, G.C., Brooks, R.C., Barron, R.R., Oliver, J.D., Morse, A.W., Veasel, B. W., Esker, P.M. and Clarke, R.C. (2004) S-Band Operation of SiC Power MESFET with 20 W (4.4 W/mm) Output Power and 60% PAE. IEEE Transaction on Electron Devices, 51, 839-845.
https://doi.org/10.1109/TED.2004.828279

[10]   Asmi, S. and Abdel-Motaleb, I.M. (2006) Effect of Traps and Self Heating on the Microwave Performance of SiC MESFETs. The 8th International Conference on Solid State and Integrated Circuit Technology, Shanghai, China, 23-26 October 2006.
https://doi.org/10.1109/ICSICT.2006.306553

[11]   Ouaida, R., Berthou, M., León, J., Perpinà, X., Oge, S., Brosselard, P. and Joubert, C. (2014) Gate Oxide Degradation of SiC MOSFET in Switching Conditions. IEEE Electron Devices Letters, 35, 1284-1286.
https://doi.org/10.1109/LED.2014.2361674

[12]   Leone, S., Beyer, F.C., Pedersen, H., Andersson, S., Kordina, O., Henry, A. and Janzén, E. (2011) Chlorinated Precursor Study in Low Temperature Chemical Vapor Deposition of 4H-SiC. Thin Solid Film, 519, 3074-3080.
https://doi.org/10.1016/j.tsf.2010.12.119

[13]   Chien, F.R., Ning, X.J., Stemmer, S. and Pirouz, P. (1996) Growth Defects in GaN Films on 6H-SiC Substrates. Applied Physics Letters, 68, 2678.
https://doi.org/10.1063/1.116279

[14]   Kong, H.S., Glass, J.T. and Davis, R.F. (1989) Growth Rate, Surface Morphology, and Defect Microstructures of β-SiC Films Chemically Vapor Deposited on 6H-SiC Substrates. Journal of Material Research, 4, 204-214.
https://doi.org/10.1557/JMR.1989.0204

[15]   Kimoto, T., Miyamoto, N. and Matsunami, H. (1999) Performance Limiting Surface Defectsin SiC Epitaxial p-n Junction Diodes. IEEE Transactions on Electron Devices, 46, 871-477.
https://doi.org/10.1109/16.748864

[16]   Duncan, M.D. and Bashkansky, M. (1998) Subsurface Defect Detection in Materials Using Optical Coherence Tomography. Optical Express, 2, 540-545.
https://doi.org/10.1364/OE.2.000540

[17]   Nakashima, S. and Harima, H. (2004) Characterization of Defects in SiC Crystals by Raman Scattering. In: Choyke W.J., Matsunami, H. and Pensl, G., Eds., Silicon Carbide. Advanced Texts in Physics, Springer, Berlin, Heidelberg.
https://doi.org/10.1007/978-3-642-18870-1_24

[18]   Weyher, J.L. (2006) Characterization of Wide-Band-Gap Semiconductors (GaN, SiC) by Defect-Selective Etching and Complementary Methods. Superlattices and Microstructures, 40, 279-288.
https://doi.org/10.1016/j.spmi.2006.06.011

[19]   Dudley, M., Wang, S.P., Huang, W., Carter Jr., C.H., Tsvetkov, V.F. and Fazi, C. (1995) White-Beam Synchrotron Topographic Studies of Defects in 6H-SiC Single Crystals. Journal of Physics D: Applied Physics, 28, A63-A67.
https://doi.org/10.1088/0022-3727/28/4A/012

[20]   Dudley, M., Huang, X. and Vetter, W.M. (2004) Synchrotron White Beam X-Ray Topography and High Resolution X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Device Structures. In: Choyke, W.J., Matsunami, H. and Pensl, G., Eds., Silicon Carbide. Advanced Texts in Physics, Springer, Berlin, Heidelberg.
https://doi.org/10.1007/978-3-642-18870-1_26

[21]   Dendo, S., Abdel-Motaleb, I., Lowe, K. and Young, L. (1985) Deep Levels in Semi-Insulating LEC GaAs before and after Silicon Implantation. Journal of the Electrochemical Society, 132, 2673.
https://doi.org/10.1149/1.2113646

[22]   Hemmingsson, C., Son, N.T., Kordina, O., Bergman, J.P. and Janzén, E. (1997) Deep Level Defects in Electron-Irradiated 4H SiC Epitaxial Layers. Journal of Applied Physics, 81, 6155.
https://doi.org/10.1063/1.364397

[23]   Dunn, F. (1959) Ultrasonic Absorption Microscope. The Journal of the Acoustical Society of America, 31, 632.
https://doi.org/10.1121/1.1907767

[24]   Kessler, L.W. and Yuhas, D.E. (1979) Acoustic Microscopy. Proceedings of the IEEE, 67, 526-536.
https://doi.org/10.1109/PROC.1979.11281

[25]   Semmens, J.E. and Kessler, L.W. (1989) Nondestructive Evaluation of TAB Bonding by Means of Acoustic Microscopy: Overview of Progress Using C-Mode Scanning Acoustic Microscopy. 9th IEEE/CHMT, International Conference on Manufacturing Technology, 12-17 February 1989.

[26]   Briggs, G. and Kolosove, O. (2010) Acoustic Microscopy. 2nd Edition, Oxford University Press, Oxford.

[27]  
https://www.ksisam.com/acousticmicroscopy-en/home-acoustic-microscopy.php

 
 
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