P. Bergveld, “Development of an Ion-Sensitive Solid- State Device for Neurophysiologic Measurements,” IEEE Transactions on Biomedical Engineering, Vol. 17, No. 1, 1970, pp. 70-71. doi:10.1109/TBME.1970.4502688
 D. M. Wilson, S. Hoyt, J. Janata, K. Booksh and L. obando, “Chemical Sensors for Portable ,Handheld Field Instruments,” IEEE Sensors Journal, Vol. 1, No. 4, 2001, pp. 256-274. doi:10.1109/7361.983465
 P. Bergveld, “Thirty Years of ISFETOLOGY What Happened in the Past 30 Years and What May Happen in the Next 30 Years,” Sensors and Actuators B: Chemical, Vol. 88, No. 1, 2000, pp. 1-20. doi:10.1016/S0925-4005(02)00301-5
 S. jamasb, S. D. Collins and R. L Smith, “A Physiccal Model for Threshold Voltage Insability in SI3N4 Gate H+ Sensitive FETs,” IEEE Tranactions on Electron Devices, Vol. 45 No. 6, 1998, pp. 1239-1245. doi:10.1109/16.678525
 P. R. Barabash, R. S. C Cobbold and W. B. Wlodarski, “Analysis of the Threshold Voltage and Its Temperature Dependence in Electrolyte-in Sulator—Semiconductor Field Effect Transistor,” IEEE Transactions on Electronic Devices, Vol. 34, No. 6, 1987, pp. 1271-1282. doi:10.1109/T-ED.1987.23081
 N. S. Haron, M. K. B. Mahamad, I. A. Aziz and M. Mehat, “A System Architecture for Water Quality Monitoring System Using Wired Sensors,” International Symposium on Information Technology, Kuala Lumpur, 26-28 August 2008, pp. 1-7. doi:10.1109/ITSIM.2008.4631927
 B. Palan, F. V. Santos and J. M. Karam, “New ISFET Sensor Interface Circuit for Biomedical Applications,” Sensors and Actuators B: Chemical, Vol. 57, No. 1-3, 1999, pp. 63-68. doi:10.1016/S0925-4005(99)00136-7
 C. H. Yang, W. Y. Chung, K. K. Lin, D. G. Pijanowska and W. Torbicz, “A Low-Power Telemetric System De- sign for ISFET-Based Sensor Array Applications,” 16th European Conference on Circuit Theory and Design, Kraków, 1-4 September 2003, pp. 260-263.
 A. Morgenshtein, L. Sudakov-Boreysha and U. Dinnar, “CMOS Readout Circuitry for ISFET Micro-Systems,” Sensors and Actuators B: Chemical, Vol. 97, No. 1, 2004, pp. 122-131. doi:10.1016/j.snb.2003.08.007
 R. E. G. Van Hal, J. C. T. Eijkel and P. Bergveld, “A Novel Description of ISFET Sensitivity with the Buffer Capacity and Double-Layer Capacitance as Key Parame- ters,” Sensors and Actuators B: Chemical, Vols. 24-25, No. 1-3, 1995, pp. 201-205. doi:10.1016/0925-4005(95)85043-0
 R. M. Wen, Z. L. Zhu and S. L. Chen, “Preparation of high purity water with low concentration of dissolved oxygen (DO) and total organic carbon (TOC) for VLSI process,” Proceeding of 6th International Conference Solid-State and Integrated-Circuit Technology, Shanghai, 22-25 October 2001, p. 475-476.
 T.-Z. Qiao and L. Song, “The Design of Multi-Parameter Online Monitoring System of Water Quality Based on GPRS,” 2010 International Conference on Multimedia Technology, Ningbo, 29-31 October 2010, pp. 1-3. doi:10.1109/ICMULT.2010.5631313
 J. C. Chou, H. M. Tsai, C. N. Shiao and J. S. Lin, “Study and Simulation of the Drift Behavior of Hydrogenated Amorphous Silicon Gate pH-ISFET,” Sensors and Actuators B: Chemical, Vol. 62, No. 2, 2000, pp. 97-101. doi:10.1016/S0925-4005(99)00366-4
 S. Casans, A. E. Navarro, D. Ramirez, J. M. Espi, N. Abramova and A. Baldi, “Instrumentation System to Improve ISFET Behaviour,” Proceeding of 19th IEEE Instrumentation and Measurement Technology Conference, Anchorage, 21-23 May 2002, pp. 1291-1294.
 S. Jamasb, “An Analytical Technique for Counteracting Drift in Ion-Selectivefield Effect Transistors (ISFETs),” IEEE Sensors Journal, Vol. 4, No. 6, 2004, pp. 795-801. doi:10.1109/JSEN.2004.833148