ABSTRACT The propagation of acoustic waves in a homogeneous isotropic semiconducting layer sandwiched between two homogeneous transversely isotropic piezoelectric halfspaces has been investigated. The mathematical model of the problem is depicted by a set of partial differential equations of motion, Gauss equation in piezoelectric material and electron diffusion equation in semiconductor along with the boundary conditions to be satisfied at the piezoelectric-semiconductor interfaces. The secular equations describing the symmetric and asymmetric modes of wave propagation have been derived in compact form after obtaining the analytical expressions for various field quantities that govern the wave motion. The complex secular equation has been solved numerically using functional interaction method along with irreducible cardano method. The computer simulated results are obtained with the help of MATLAB software for 6 mm cadmium selenide (CdSe) piezoelectric material and n-type silicon (Si) semiconductor in respect of dispersion curve, attenuation and specific loss factor of energy dissipation for symmetric (sym) and asymmetric (asym) modes of wave propagation. The study may find applications in non-destructive testing, resonators, waveguides etc.
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