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 IJCNS  Vol.4 No.10 , October 2011
Using LDMOS Transistor in Class-F Power Amplifier For WCDMA Applications
Abstract: The fundamental operating principle of a Class F power amplifier and the factors aiding or affecting Class F performance were explicated previously. A Class F power amplifier design which satisfies WCDMA specifications is explained in this paper. The Class F amplifier was designed by employing Motorola’s LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor models and we simulated its performance by means of ADS. A variety of procedures were applied in the process of designing Class F amplifier, namely, DC simulation, bias point selection, source-pull and load-pull characterization, input and output matching circuit design and the design of suitable harmonic traps, which are explained here.
Cite this paper: nullM. Sabaghi, S. Hadianamrei, M. Rahnama and M. Lahiji, "Using LDMOS Transistor in Class-F Power Amplifier For WCDMA Applications," International Journal of Communications, Network and System Sciences, Vol. 4 No. 10, 2011, pp. 662-666. doi: 10.4236/ijcns.2011.410081.
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