Back
 OPJ  Vol.7 No.5 , May 2017
RETRACTED: Phosphorus Dopant Distribution in Highly N-Doped Ge Film on Si(001) Substrate Using Specific GaP Solid Source
Abstract: Short Retraction Notice This article has been retracted to straighten the academic record. In making this decision the Editorial Board follows COPE's Retraction Guidelines. The aim is to promote the circulation of scientific research by offering an ideal research publication platform with due consideration of internationally accepted standards on publication ethics. The Editorial Board would like to extend its sincere apologies for any inconvenience this retraction may have caused. Please see the article page for more details. The full retraction notice in PDF is preceding the original paper which is marked "RETRACTED".
Cite this paper:   
References

[1]   Sun, X., Liu, J.F., Kimerling, L.C. and Michel, J. (2009) Direct Gap Photoluminescence of N-Type Tensile-Strained Ge-on-Si. Applied Physics Letters, 95, 011911-011914.

[2]   Ishikawa, Y. and Wada, K. (2010) Gemanium for Silicon Photonics. Thin Solid Films, 518, S83.

[3]   Liu, J., Camacho-Aguilera, R., Bessette, J.T., Sun, X., Wang, X., Cai, Y., Kimerling, L.C. and Michel, J. (2012) Ge-on-Si Optoelectronics. Thin Solid Films, 520, 3354-3360.

[4]   Liu, J., Sun, X., Aguilera, R.C., Kimerling, L.C. and Michel, J. (2010) Ge-on-Si Laser Operating at Room Temperature. Optics Letters, 35, 679.

[5]   Luong, T.K.P., et al. (2014) Molecular-Beam Epitaxial Growth of Tensile-Strained and N-Doped Ge/Si(001) Films Using a GaP Decomposition Source. Thin Solid Films, 557, 70-75.

[6]   El Kurdi, M., Fishman, G., Sauvage, S. and Boucaud, P. (2010) Band Structure and Optical Gain of Tensile-Strained Germanium Based on a 30 Band k⋅p Formalism. Journal of Applied Physics, 107, Article ID: 013710.
https://doi.org/10.1063/1.3279307

[7]   Camacho-Aguilera, R., Cai, Y., Bessette, J.T., Kimerling, L.C. and Michel, J. (2012) High Active Carrier Concentration in N-Type, Thin Film Ge Using Delta-Doping. Optical Materials Express, 2, Article ID: 14692-1469.
https://doi.org/10.1364/ome.2.001462

[8]   Luong, T.K.P., et al. (2015) Making Germanium, an Indirect Band Gap Semiconductor, Suitable for Light-Emitting Devices. Advances in Natural Sciences: Nanoscience and Nanotechnology, 6, Article ID: 015013.

[9]   Shitara, T. and Ebert, K. (1994) Electronic Properties of InGaP Grown by Solid Source Molecular Beam Epitaxy with a GaP Decomposition Source. Applied Physics Letters, 65, 356.

[10]   Lippert, G., Osten, H.J., Krüger, D., Gaworzewski, P. and Eberl, K. (1995) Heavy Phosphorus Doping in Molecular Beam Epitaxial Grown Silicon with a GaP Decomposition Source. Applied Physics Letters, 66, 3197.

[11]   Madelung, O. (1982) Physics of Group IV Elements and III-V Compounds, Landolt-Börnstein. In: Numerical Data and Functional Relationships in Science and Technology, Vol. 17, Springer, Berlin.

[12]   Luong, T.K.P., et al. (2013) Control of Tensile Strain and Interdiffusion in Ge/Si (001) Epilayers Grown by Molecular-Beam Epitaxy. Journal of Applied Physics, 114, Article ID: 083504.
https://doi.org/10.1063/1.4818945

[13]   Camacho-Aguilera, R., Han, Z., Cai, Y., Kimerling, L.C. and Michel, J. (2013) Direct Band Gap Narrowing in Highly Doped Ge. Applied Physics Letters, 102, Article ID: 152106.
https://doi.org/10.1063/1.4802199

[14]   Jain, S.C. and Roulston, D.J. (1991) A Simple Expression for Band Gap Narrowing (BGN) in Heavily Doped Si, Ge, GaAs and GexSi1−x Strained Layers. Solid State Electron, 34, 453-465.

[15]   Oehme, M., Gollhofer, M., Widmann, D., Schmid, M., Kaschel, M., Kasper, E. and Schulze, J. (2013) Direct Bandgap Narrowing in Ge LED’s on Si Substrates. Optics Express, 21, 2206-2211.
https://doi.org/10.1364/OE.21.002206

 
 
Top