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 ENG  Vol.9 No.1 , January 2017
Designing a Carbon Nanotube Field-Effect Transistor with High Transition Frequency for Ultra-Wideband Application
Abstract: Theoretical calculations predict transition frequencies in the terahertz range for the field-effect transistors based on carbon nanotubes, and this shows their suitability for being used in high frequency applications. In this paper, we have designed a field-effect transistor based on carbon nanotube with high transition frequency suitable for ultra-wide band applications. We did this by optimizing nanotube diameter, gate insulator thickness and dielectric constant. As a result, we achieved the transition frequency about 7.45 THz. The environment of open source software FETToy is used to simulate the device. Also a suitable model for calculating the transition frequency is presented.
Cite this paper: Nouri-Bayat, R. and Kashani-Nia, A. (2017) Designing a Carbon Nanotube Field-Effect Transistor with High Transition Frequency for Ultra-Wideband Application. Engineering, 9, 22-35. doi: 10.4236/eng.2017.91003.
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