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 JECTC  Vol.6 No.1 , March 2016
A Review of the Study on the Electromigration and Power Electronics
Abstract: Electromigration is a main challenge in the pursuit of power electronics, because physical limit to increase current density in power electronics is electromigration (EM), whereas much higher electrical current and voltage are required for power electronics packaging. So the effect of EM is an important issue in applications where high current densities are used, such as in microelectronics and related structures (e.g., Power ICs). Since the structure size of integrated circuits (ICs) decreases and the practical significance of this effect increases, the result is EM failure. On the other hand, in the next generation power electronics technology electrical current density is expected to exceed 107 A/cm2 which is another challenge. This review work has been carried out to identify the mechanism of EM damage in power electronics (e.g., pure metallization and solder joints) and also how to control this kind of damage.
Cite this paper: Rahman, M. , Musa, A. , Neher, B. , Patwary, K. , Rahman, M. and Islam, M. (2016) A Review of the Study on the Electromigration and Power Electronics. Journal of Electronics Cooling and Thermal Control, 6, 19-31. doi: 10.4236/jectc.2016.61002.
References

[1]   Weber, W.M. (2008) Silicon to Nickel Silicide Longitudinal Nanowire Heterostructures: Synthesis, Electrical Charac terization and Novel Devices. PhD Thesis, Technische University Munchen, Munich.

[2]   Bourjot, E., Putero, M., Perrin-Pellegrino, C., Gergaud, P., Gregoire, M., Nemouchi, F. and Mangelinck, D. (2014) Kinetics Study of NiPt(10 at.%)/Si0.7Ge0.3 Solid State Reactions. Microelectronic Engineering, 120, 163-167.
http://dx.doi.org/10.1016/j.mee.2013.12.009

[3]   Najm, F., Hajj, I. and Yang, P. (1989) Electromigration Median Time-to-Failure Based on a Stochastic Current Waveform. IEEE International Conference on Computer Design, Cambridge, 2-4 October 1989, 447-450.

[4]   Sigal, L., et al. (2011) Uniting to Overcome a Mounting BEOL Electromigration Reliability Challenge. Proceedings of IEEE International Conference on Computer-Aided Design, Munich, 7 November 2011.

[5]   Pak, J., Pathak, M., Lim, S.K. and Pan1, D.Z. (2011) Modeling of Electromigration in Through-Silicon-Via Based 3D IC. IEEE 61st Electronic Components and Technology Conference, Lake Buena Vista, 31 May 2011-3 June 2011, 1420-1427.

[6]   Jing, J.P., Liang, L. and Meng, G. (2010) Electromigration Simulation for Metal Lines. Journal of Electronic Packaging, 132, Article ID: 011002.
http://dx.doi.org/10.1115/1.4000716

[7]   Lienig, J. (2005) Interconnect and Current Density Stress: An Introduction to Electromigration-Aware Design. Proceedings of IEEE SLIP, San Francisco, 2-3 April 2005, 81-88.

[8]   Heliot, J.P. and Tullos, L. (2001) International SEMATE Technology Transfer. STMicroelectronics.

[9]   Pak, J., Limet, S.K. and Pan, D.J. (2012) Electromigration-Aware Routing for 3D ICs with Stress-Aware EM Modeling. Proceedings of IEEE International Conference on Computer-Aided Design, New York, 8 November 2012, 325-332.
http://dx.doi.org/10.1145/2429384.2429451

[10]   Lee, J.H., et al. (2008) Size Effect on Electromigration Reliability of Pb-Free Flip Chip Solder Bump. IEEE 58th Electronic Components and Technology Conference, Lake Buena Vista, 27-30 May 2008, 2030-2034.

[11]   Tan, C.M. (2010) Electromigration in ULSI Interconnections. World Scientific Publishing Co. Pte. Ltd., Singapore.
http://www.worldscibooks.com/engineering/7294.html

[12]   CSL (Computer Simulation Laboratory) (2011) Middle East Technical University.
http://www.csl.mete.metu.edu.tr/Electromigration/emig.htm

[13]   DoITPoMS. TLP Library: Electromigation. University of Cambridge, Cambridge.
http://www.doitpoms.ac.uk/tlplib/electromigration/flux_2.php

[14]   Nah, J.W., Kim, J.H., Lee, H.M. and Paik, K.-W. (2033) Electromigration in Flip Chip Solder Bump of 97Pb-3Sn/37Pb-63Sn Combination Structure. Acta Materialia, 52, 129-136.
http://dx.doi.org/10.1016/j.actamat.2003.08.035

[15]   Tanimoto, S., Nishio, N., Suzuki, T., Murakami, Y., Ohashi, H., Yamaguchi, H. and Okumura, H. (2010) Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures. Materials Science Forum, 645-648, 1139-1142.

[16]   Islam, N., Kim, G. and Kim, K. (2014) Electromigration for Advanced Cu Interconnect and the Challenges with Reduced Pitch Bumps. 2014 IEEE 64th Electronic Components and Technology Conference (ECTC), Orlando, 27-30 May 2014, 49-55.
http://dx.doi.org/10.1109/ectc.2014.6897266

[17]   Lienig, J. (2013) Electromigration and Its Impact on Physical Design in Future Technologies. Proceedings of the 2013 ACM International Symposium on International Symposium on Physical Design, Stateline, 24-27 March 2013, 33-40.
http://dx.doi.org/10.1145/2451916.2451925

[18]   Zeng, K. and Tu, K.N. (2002) Six Cases Reliability Study of Pb-Free Solder Joints in Electronic Packaging Technology. Materials Science and Engineering, 38, 55-105.
http://dx.doi.org/10.1016/S0927-796X(02)00007-4

[19]   Geden, B. (2011) Understand and Avoid Electromigration (EM) & IR-Drop in Custom IP Blocks. Synopsys, Mountain View, 1-6.

[20]   Tao, J., Young, K.K., Cheung, N.W. and Hu, C. (1993) Electromigration Reliability of Tungsten and Alumium vias and Improvements under AC Current Stress. IEEE Transactions on Electron Devices, 40, 1398-1405.
http://dx.doi.org/10.1109/16.223698

[21]   Lu, Z., Huang, W., Stan, M.R., Skdron, K. and Lach, J. (2007) Interconnect Lifetime Prediction for Reliability-Aware Systems. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 15, 159-172.

[22]   Ye, H., Basaran, C., Hopkins, D. and Cartwright, A. (2002) Reliability of Solder Joints under Electrical Stressing-Strain Evolution of Solder Joints. The 8th Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, San Diego, 1 June 2002, 946-952.

[23]   Ye, H., Cemal, B. and Hopkins, D.C. (2003) Damage Mechanics of Microelectronics Solder Joints under High Current Densities. International Journal of Solids and Structures, 40, 4021-4032.
http://dx.doi.org/10.1016/S0020-7683(03)00175-6

[24]   Blech, I.A. and Herring, C. (1976) Stress Generation by Electromigration. Applied Physics Letters, 29, 131-133.
http://dx.doi.org/10.1063/1.89024

[25]   Lee, T.Y., Tu, K.N. and Frear, D.R. (2001) Electromigration of Eutectic SnPb and SnAg3.8Cu0.7 Flip Chip Solder Bumps and Under-Bump Metallization. Journal of Applied Physics, 90, 4502-4508.
http://dx.doi.org/10.1063/1.1400096

[26]   Nguyena, H.V., Salm, C., Krabbenbrgb, B., Zaage, K.W., Bisschopb, J., Mouthma, A.J. and Kuper, F.G. (2004) Effect of Thermal Gradients on the Electromigration Lifetime in Power Electronics. 42nd Annual International Reliability Physics Symposium, Phoenix, 25-29 April 2004, 619-620.

[27]   Yang, D., Alam, M.O., Yu, B.Y. and Chan, Y.C. (2006) Thermomigration in Eutectic Tin-Lead Flip Chip Solder Joints. 8th Electronic Packaging Technology Conference, Singapore, 6-8 December 2006, 665-569.
http://dx.doi.org/10.1109/eptc.2006.342775

[28]   Gui, X., James, W.H., Steven, K.D. and Michael, J.B. (1998) Simulation of Temperature Cycling Effects on Electromigration Bhavior under Pulsed Current Stress. IEEE Transactions on Electron Devices, 45, 380-386.
http://dx.doi.org/10.1109/16.658670

[29]   Young, D. and Christou, A. (1994) Failure Mechanism Models for Electromigration. IEEE Transactions on Reliability, 43, 186-192.
http://dx.doi.org/10.1109/24.294986

[30]   Black, J.R. (1969) Electromigration—A Brief Survey and Some Recent Results. IEEE Transactions on Electronic Devices, 16, 338-347.
http://dx.doi.org/10.1109/T-ED.1969.16754

[31]   Tan, C.M. and Roy, A. (2007) Electromigration in ULSI Interconnects. Materials Sciences and Engineering, 58, 1-75.
http://dx.doi.org/10.1016/j.mser.2007.04.002

[32]   Guo, J., Papanikolaou, A., Stucchi, M., Croes, K., TÖkei, Z. and Catthoor, F. (2008) The Analysis of System-Level Timing Failures Due to Interconnect Reliability Degradation. IEEE Transactions on Device and Materials Reliability, 8, 652-663.
http://dx.doi.org/10.1109/TDMR.2008.2006986

 
 
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