Impact of Parasitic Resistances on the Output Power of a Parallel Vertical Junction Silicon Solar Cell

Nfally  Dieme; Moustapha  Sane

doi:10.4236/epe.2016.83011

Nfally Dieme, Moustapha Sane

Abstract: This paper describes the theoretical model for calculating IV-curve of parallel vertical silicon solar cells (SCs) based on solving diffusion-recombination equation for such SC, which was suggested that two IV curve zones (those which are close to the short current and open circuit points) can be linearized. This linearalization allows obtaining the values of shunt (R_sh) and series (R_s) resistances. The evolution of the electric power based on these resistances was illustrated to show the values that shunt and series resistances must have to obtain a good efficiency.

Keywords: Series Resistance, Shunt Resistance, Power, Vertical Junction

Cite this paper: Dieme, N. and Sane, M. (2016) Impact of Parasitic Resistances on the Output Power of a Parallel Vertical Junction Silicon Solar Cell. Energy and Power Engineering, 8, 130-136. doi: 10.4236/epe.2016.83011.

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