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 EPE  Vol.8 No.3 , March 2016
Impact of Parasitic Resistances on the Output Power of a Parallel Vertical Junction Silicon Solar Cell
Abstract: This paper describes the theoretical model for calculating IV-curve of parallel vertical silicon solar cells (SCs) based on solving diffusion-recombination equation for such SC, which was suggested that two IV curve zones (those which are close to the short current and open circuit points) can be linearized. This linearalization allows obtaining the values of shunt (Rsh) and series (Rs) resistances. The evolution of the electric power based on these resistances was illustrated to show the values that shunt and series resistances must have to obtain a good efficiency.
Cite this paper: Dieme, N. and Sane, M. (2016) Impact of Parasitic Resistances on the Output Power of a Parallel Vertical Junction Silicon Solar Cell. Energy and Power Engineering, 8, 130-136. doi: 10.4236/epe.2016.83011.
References

[1]   Samb, M.L., Zoungrana, M., Sam, R., Dione, M.M., Deme, M.M. and Sissoko, G. (2010) Etude en modelisation à 3-d d’une photopile au silicium en régime statique placée dans un champ magnétique et sous éclairement multispectral: Détermination des paramètres électriques. Journal des Sciences, 10, 23-38.

[2]   Bensalem, S. and Chegaar, M. (2013) Thermal Behavior of Parasitic Resistances of Polycrystalline Silicon Solar Cells. Revue des Energies Renouvelables, 16, 171-176.

[3]   Dieme, N., Sane, M. and Barro, I.F. (2015) Photocurrent and Photovoltage under Influence of the Solar Cell Thickness. ISJ Theoretical & Applied Science, 7, 1-6.
http://dx.doi.org/10.15863/TAS.2015.07.27.1

[4]   Valkov, S. (1994) Electronique Analogique, Edition Castéilla, Collection A. CAPLIEZ.

[5]   Levy, F. (1995) Traité des matériaux 18: Physique et technologie des semi-conducteurs. Presses Polytechniques et Uni- versitaires Romandes.

[6]   Dieme, N., Seibou, B., El Moujtaba, M.A.O., Gaye, I. and Sissoko, G. (2015) Thermal Behavior of a Parallel Vertical Junction Silicon Photocell in Static Regime by Study of the Series and Shunt Resistances under the Effect of Temperature. International Journal of Innovative Science, Engineering & Technology (IJISET), 2, 433-437.

[7]   Dieme, N., Zoungrana, M., Mbodji, S., Diallo, H.L., Ndiaye, M., Barro, F.I. and Sissoko, G. (2014) Influence of Temperature on the Electrical Parameters of a Vertical Parallel Junction Silicon Solar Cell under Polychromatic Illumination in Steady State. Research Journal of Applied Sciences, Engineering and Technology, 7, 2559-2562.

[8]   Dieme, N. (2015) Study of the Electrons Density in the Base of the Parallel Vertical Junction Solar Cell under the Influence of the Temperature. American Journal of Optics and Photonics, 3, 13-16.
http://dx.doi.org/10.11648/j.ajop.20150301.13

[9]   Diallo, L.H., Dieng, B., Ly, I., Dione, M.M., Wereme, A., Ndiaye, M. and Sissoko, G. (2012) Determination of the Recombination and Electrical Parameters of a Vertical Multijunction Silicon Solar Cell. Research Journal of Applied Sciences, Engineering and Technology, 4, 2626-2631.

[10]   Sze, S.M. and Ng, K.K. (2007) Physics of Semiconductor Devices. 3rd Edition, John Wiley & Sons, Hoboken.

[11]   Schroder, D.K. (2006) Semiconductor Material and Device Characterization. 3rd Edition, John Wiley & Sons, Inc., Hoboken.

[12]   Barro, F.I., Gaye, S., Deme, M., Diallo, H.L., Samb, M.L., Samoura, A.M., Mbodji, S. and Sissoko, G. (2008) Influence of Grain Size and Grain Boundary Recombination Velocity on the Series and Shunt Resistances of a Polycrystalline Silicon Solar Cell. Proceedings of the 23rd European Photovoltaic Solar Energy Conference, 612-615.

 
 
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