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 JAMP  Vol.3 No.12 , December 2015
The Nonideality Coefficient of Current-Voltage Characteristics for Asymmetric p-n-Junctions in a Microwave Field
Abstract: It is shown that the nonideality coefficient m actually depends on the electron temperature Te, and the hole temperature Th. We get more general expression for the nonideality coefficient, taking into account the concentration of electrons and holes, as well as their temperature, coefficient and diffusion length, the temperature of the phonons, the applied voltage, and the height of the potential barrier.
Cite this paper: Gulyamov, G. , Dadamirzaev, M. and Mavlyanov, H. (2015) The Nonideality Coefficient of Current-Voltage Characteristics for Asymmetric p-n-Junctions in a Microwave Field. Journal of Applied Mathematics and Physics, 3, 1679-1683. doi: 10.4236/jamp.2015.312193.
References

[1]   Shockley, W. (1953) Theory of Electrical Semiconductors. Foreign Literature Publishing House, Moscow, 186 p.

[2]   Sah, C.T., Noyce, R.H. and Shockly, W. (1957) Carrier Generation and Recombination in p-n-Junctions and p-n-Junctions Characteristics. Proceedings of the IRE, 45, 1228-1243.
http://dx.doi.org/10.1109/JRPROC.1957.278528

[3]   Ashmontas, S.P., Olekas, A.P. and Shimulis, A.I. (1985) Effect of Warming up of the Charge Carriers in the Form of Current-Voltage Characteristics of p-n-Junction Germanium. Semiconductors, 29, 807-809.

[4]   Ashmontas, S.P., Olekas, A.P. and Shimulis, A.I. (1980) Temperature Anomalies Schottky Barrier Diodes Ni-n-Si. Lithuanian Physical Collection, 20, 39-46.

[5]   Veynger, A.I. and Sargsiyan, M.P. (1980) The Kinetics of the Thermopower Arising in the p-n-Junction with Heating Carrier. Semiconductors, 14, 2020-2027.

[6]   Ablyazimova, N.A., Veynger, A.I. and Pitanov, V.S. (1992) The Impact of a Strong Microwave Field in the Photovoltaic Properties of Silicon p-n-Junctions. Semiconductors, 26, 1041-1047.

[7]   Dadamirzaev, M.G. (2011) Heating of Charge Carriers and Rectification of Current in Asymmetrical p-n Junction in a Microwave Field. Semiconductors, 45, 288-291.
http://dx.doi.org/10.1134/S1063782611030092

[8]   Dadamirzaev, M.G. (2015) Influence of Deformation on CVC p-n-Junction in a Strong Microwave Field. Journal of Modern Physics, 6, 176-180.
http://dx.doi.org/10.4236/jmp.2015.62023

[9]   Smirnov, V.I. (1974) Course of Higher Mathematician. Vol. 1, Nauka, Moscow, 480 p.

 
 
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