JMP  Vol.6 No.14 , November 2015
The Interaction of Impurity Oxygen with Radiation Defects in Silicon Crystal
ABSTRACT
Present paper describes the investigation of vacancy (V) and interstitial (I) annihilation on oxygen atoms by means of infrared (IR) absorption and Hall-effect measurements of the accumulation of vacancy-oxygen complexes (VO) in Si crystals at high energy electron irradiation. Silicon samples, containing along with isolated oxygen atoms, more complicated oxygen quasi-molecules of SiOn (n = 1, 2, 3…) type, were used. At isochronal and isothermal annealing in the temperature range of 300°C - 350°C, apart from the reaction of vacancy capturing by oxygen atoms with formation of A-centers, more complicated reactions with participation of vacancies and oxygen atoms were observed: A-centers, oxygen containing quasi-molecules. A model is suggested to describe the observed processes that are qualitatively different from those taking place in samples containing completely dissociated oxygen.

Cite this paper
Yeritsyan, H. , Sahakyan, A. , Grigoryan, N. , Hakhverdyan, E. , Harutyunyan, V. , Hovhannisyan, A. , Sahakyan, V. , Khachatryan, A. , Grigoryan, B. , Hakobyan, L. , Amatuni, G. , Vardanyan, A. and Tsakanov, V. (2015) The Interaction of Impurity Oxygen with Radiation Defects in Silicon Crystal. Journal of Modern Physics, 6, 2050-2057. doi: 10.4236/jmp.2015.614211.
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