JMP  Vol.6 No.13 , October 2015
Scattering of Conduction Electrons on the Static Deformation Raised by Irradiation in n-GaP Crystals
ABSTRACT
Study of spectral dependences of absorption coefficient at the region of absorption by free carriers shows that the introduction of radiation defects in n-GaP crystals leads to the appearance of additional scattering besides of traditional ones. A new scattering mechanism on “frozen” phonons (deformation localized near the radiation defects) is suggested and its behavior in experimental and theoretical aspects taking into account Х transitions at the scattering process has been studied. It was shown that the increase of “frozen” phonons’ concentration results to the growth of this mechanism contribution in the whole scattering and the absorption coefficient by free carriers is described approximately by low α ~ ω-r, where -1/2 ≤ r ≤ 7/2. Suggested scattering mechanism allows explaining qualitatively the decrease of r. It was established that the dis- ordered by irradiation region effectively decreases the concentration of free carriers, but being a region of increased resistivity, it influences the scattering slightly even at the actual quantum region .

Cite this paper
Grigoryan, N. , Yeritsyan, H. , Harutyunyan, V. , Hakobyan, N. , Aleksanyan, E. and Sahakyan, V. (2015) Scattering of Conduction Electrons on the Static Deformation Raised by Irradiation in n-GaP Crystals. Journal of Modern Physics, 6, 1935-1941. doi: 10.4236/jmp.2015.613199.
References
[1]   Demidenko, Z.A. and Tomchuk, P.M. (1981) Physics and Technique of Semiconductors, No. 8, 1589-1595. (In Russian)

[2]   Giehler, M., Kostial, H., Hey, R. and Grahn, H.T. (2004) Journal of Applied Physics, 96, 4755-4761.
http://dx.doi.org/10.1063/1.1803635

[3]   Demidenko, Z.A., Brailovskii, E.Yu., Grigoryan, N.E. and Yeritsyan, H.N. (1983) Izvestia Academy of Sciences of Republic of Armenia, Physics, 18, 19-25. (In Russian).

[4]   Beliaev, A.E., Gorodnichii, O.P., Demidenko, Z.A. and Tomchuk, P.M. (1982) Ukrainian Physical Journal, 27, 666-671. (In Russian)

[5]   Remeniuk, A.D., Zabelina, L.G., et al. (1968) Physics and Technique of Semiconductors, No. 5, 666-670. (In Russian)

[6]   Slupinski, T., Molas, M. and Papierska, J. (2009) Acta Physica Polonika, 116, 979-982.

[7]   Abagyan, S.A., Ivanov, G.A., et al. (1978) Physics and Technique of Semiconductors, No. 7, 1397-1403. (In Russian)

[8]   Yeritsyan, H., Grigoryan, N., Harutyunyan, V., Hakhverdyan, E. and Baghdasaryan, V. (2014) Journal of Modern Physics, 5, 51-54.
http://dx.doi.org/10.4236/jmp.2014.51008

[9]   Brailovskii, E.Yu., Grigoryan, N.E. and Eritsyan, G.N. (1980) Physica Status Solidi (A), 62, 649-655.
http://dx.doi.org/10.1002/pssa.2210620237

 
 
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