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 OJF  Vol.5 No.5 , July 2015
Cold-Resistant Breeding of Oenothera speciosa Using Silico Ion Implantation
Abstract: Oenothera speciosa, belonging to thermophilous plant, cannot overwinter in Beijing. To enhance the overwintering rate of Oenothera speciosa, the seeds were treated through silico ion implantation (SII), with five various fluence ranges (1 × 109 - 1 × 1011 ions/cm2) of 40 MeV and four various fluence ranges (1 × 1010 - 5 × 1011 ions/cm2) of 35 MeV, respectively. M1 generations of various SII-treated Oenothera speciosa lines can overwinter, and the highest overwinter rate (41.3%) was observed in Oenothera speciosa lines treated with 35 MeV and fluence 5 × 1010 ions/cm2. M2 and M3 generations of all treated lines were able to overwinter smoothly. The results indicated that SII treatment can enhance the cold-resistance of Oenothera speciosa heritably. Furthermore, physiological indexes including relative electrical conductivity, MDA contents and proline contents of SII-treated Oenothera speciosa pot seedlings were detected after low temperature stress. The results revealed that relative electrical conductivities and MDA contents of M1, M2 and M3 generations of SII-treated Oenothera speciosa plants were lower than that of control, whereas the proline contents were higher than control in the LJ°C cold stress. Taken together, the cold resistance of SII-treated Oenothera speciosa plants was improved, which made it possible to be used as a perennial flower in landscaping in Beijing.
Cite this paper: Ma, Y. , Lin, Y. , Sun, L. , Song, L. , Cui, R. and Qie, Y. (2015) Cold-Resistant Breeding of Oenothera speciosa Using Silico Ion Implantation. Open Journal of Forestry, 5, 546-554. doi: 10.4236/ojf.2015.55047.
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