MSA  Vol.6 No.6 , June 2015
Direct Structural Evidences of Epitaxial Growth Ge1-X MnX Nanocolumn Bi-Layers on Ge(001)
Abstract: Molecular Beam Epitaxy (MBE) system equipped with in-situ Reflection High-Energy Electron Diffraction (RHEED) has been used for (Ge, Mn) thin film growth and monitoring the surface morphology and crystal structure of thin films. Based on the observation of changes in RHEED patterns during nanocolumn growth, we used a real-time control approach to realize multilayer structures that consist of two nanocolumn layers separated by a Ge barrier layer. Transmission Electron Microscopy (TEM) has been used to investigate the structural properties of the GeMn nanocolumns and GeMn/Ge nanocolumns bi-layers samples.
Cite this paper: Le, T. (2015) Direct Structural Evidences of Epitaxial Growth Ge1-X MnX Nanocolumn Bi-Layers on Ge(001). Materials Sciences and Applications, 6, 533-538. doi: 10.4236/msa.2015.66057.

[1]   Grünberg, P.A. (2008) Nobel Lecture: From Spin Waves to Giant Magnetoresistance and Beyond. Reviews of Modern Physics, 80, 1531.

[2]   Fert, A. (2008) Nobel Lecture: Origin, Development, and Future of Spintronics. Reviews of Modern Physics, 80, 1517.

[3]   Le, T.-G., Dau, M.-T., Le Thanh, V., Nam, D.N.H., Petit, M., Michez, L.A., Khiem, N.V. and Nguyen, M.A. (2012) Growth Competition between Semiconducting Ge1-xMnx Nanocolumns and Metallic Mn5Ge3 Clusters. Advances in Natural Sciences: Nanoscience and Nanotechnology, 3, 025007.

[4]   Le, T.-G., Nam, D.N.H., Dau, M.-T., Luong, T.K.P., Khiem, N.V., Le Thanh, V., Michez, L.A. and Derrien, J. (2011) The Effects of Mn Concentration on Structural and Magnetic Properties of Ge1-xMnx Diluted Magnetic Semiconductors. Journal of Physics: Conference Series, 292, 012012.

[5]   Le, T.G. and An, N.M. (2014) Study the Kinetics of Phase Formation of Ge1-xMnx Diluted Magnetic Semiconductors Grown on Ge(001). Proceeding of the 3rd Academic Conference on Natural Science for Master and PhD. Students from ASIAN Countries, PhnomPenh, Cambodia 11-15 November 2013, 472.

[6]   Le, T.G. and An, N.M. (2014) New Insight into the Kinetic Formation of high-TC GeMn Nanocolumns. Journal of Science and Technology, 52, 30.

[7]   Jamet, M., Barski, A., Devillers, T., Poydenot, V., Dujardin, R., Bayle-Guillemaud, P., Rothman, J., Bellet-Amalric, E., Marty, A., Cibert, J., Mattana, R. and Tatarenko, S. (2006) High-Curie-Temperature Ferromagnetism in Self-Organized Ge1-xMnx Nanocolumns. Nature Materials, 5, 653-659.

[8]   Park, Y.D., Hanbicki, A.T., Erwin, S.C., Hellberg, C.S., Sullivan, J.M., Mattson, J.E., Ambrose, T.F., Wilson, A., Spanos, G. and Jonker, B.T. (2002) A Group-IV Ferromagnetic Semiconductor: MnxGe1-x. Science, 295, 651-654.

[9]   Bougeard, D., Sircar, N., Ahlers, S., Lang, V., Abstreiter, G., Trampert, A., LeBeau, J.M., Stemmer, S., Saxey, D.W. and Cerezo, A. (2009) Ge1-xMnx Clusters: Central Structural and Magnetic Building Blocks of Nanoscale Wire-Like Self-Assembly in a Magnetic Semiconductor. Nano Letters, 9, 3743-3748.

[10]   Bihler, C., Jaeger, C., Vallaitis, T., Gjukic, M., Brandt, M.S., Pippel, E., Woltersdorf, J. and Gsele, U. (2006) Structural and Magnetic Properties of Mn5Ge3 Clusters in a Diluted Magnetic Germanium Matrix. Applied Physics Letters, 88, 112506.

[11]   Xie, Q., Madhukar, A., Chen, P. and Kobayashi, N.P. (1995) Vertically Self-Organized InAs Quantum Box Islands on GaAs(100). Physical Review Letters, 75, 2542.

[12]   Darhuber, A., Holy, V., Stangl, J., Bauer, G., Krost, A., Heinrichsdoff, F., Grundmann, M., Bimberg, D., Ustinov, V.M., Kop’ev, P.S., Kosogov, A.O. and Werner, P. (1997) Lateral and Vertical Ordering in Multilayered Self-Organized InGaAs Quantum Dots Studied by High Resolution X-Ray Diffraction. Applied Physics Letters, 70, 955.

[13]   Mateeva, E., Sutter, P., Bean, J.C. and Lagally, M.G. (1997) Mechanism of Organization of Three-Dimensional Islands in SiGe/Si Multilayers. Applied Physics Letters, 71, 3233.

[14]   Le Thanh, V., Yam, V., Boucaud, P., Fortuna, F., Ulysse, C., Bouchier, D., Vervoort, L. and Lourtioz, J.-M. (1999) Vertically Self-Organized Ge/Si(001) Quantum Dots in Multilayer Structures. Physical Review B, 60, 5851.

[15]   Le Thanh, V., Yam, V., Nguyen, L.H., Zheng, Y., Boucaud, P., Débarre, D. and Bouchier, D. (2002) Vertical Ordering in Multilayers of Self-Assembled Ge/Si(001) Quantum Dots. Journal of Vacuum Science & Technology B, 20, 1259.

[16]   Le Thanh, V. (2004) Mechanisms of Self-Organization of Ge/Si(001) Quantum Dots. Physica E: Low-Dimensional Systems and Nanostructures, 23, 401-409.