EPE  Vol.7 No.5 , May 2015
Influence of a Semiconductor Gap’s Energy on the Electrical Parameters of a Parallel Vertical Junction Photocell
Author(s) Nfally Dieme
Affiliation(s)
Laboratory of Semiconductors and Solar Energy, Department of Physics, Faculty of Science and Technology, Cheikh Anta Diop University, Dakar, Senegal.
Abstract
The present work is a theoretical study on a parallel vertical junction solar cell under a multi-spectral illumination in static regime. The density of the minority charge carriers was determined based on the diffusion equation. Photocurrent and photovoltage are deducted from such density. All these parameters are studied taking into account the influence of the gap energy (Eg).
Keywords
Vertical Junction, Energy Gap, Photocurrent Density, Photovoltage

Cite this paper
Dieme, N. (2015) Influence of a Semiconductor Gap’s Energy on the Electrical Parameters of a Parallel Vertical Junction Photocell. Energy and Power Engineering, 7, 203-208. doi: 10.4236/epe.2015.75020.
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