A. G. Cullis, L. T. Canham, and P. D. J. Calcott, “The structural and luminescence properties of porous silicon”, J. Appl. Phys., Vol. 82, 1997, pp 909-965.
 R. Boukherroub et al., “Thermal route for chemical modification and photoluminescence stabilization of porous silicon”, Phys. Stat. Sol. (A), Vol. 182, 2000, pp 117-121.
 B. Gelloz et al., “Stabilization of porous silicon electroluminescence by surface passivation with controlled covalent bonds”, Appl. Phys. Lett., Vol. 83, 2003, pp 2342-2344.
 R. Prabakaran et al., “The effects of ZnO coating on the photoluminescence properties of porous silicon for the advanced optoelectronic devices”, J. Non-Crys. Sol., Vol. 354, 2008, pp. 2181-2185.
 M. Rahmani et al., “Photoluminescence enhancement and stabilisation of porous silicon passivated by Iron”, J. Lumi., Vol. 128, 2008, pp 1763-1766
 A. G. Macedo et al., “Enhanced lifetime in porous silicon light-emitting diodes with fluorine doped tin oxide electrodes”, Thin Solid Films, Vol. 517, November 2008, pp 870-873
 E. D. Thoma, H. Shields, Y. Zhang, B. C. McCollum, R. T. Williams, J. Lumin., “EPR and Luminescence Studies of LaF3 and CeF3 under X-Ray and Laser Irradiation”, Vol. 71, 1997, pp 93 - 104.
 D. R. Lide (Ed), Physical Constants of Organic Compounds, in: CRC Handbook of Chemistry and Physics, (87th Edition), Taylor and Francis, Boca Raton, FL 2007.
 L. H. Jian et al., “Efficient visible porous silicon diodes passivated by carbon films”, Chin. Phys. Lett., Vol. 19, 2002, pp 1013-1015
 D. A. Kim, J.-H. Shim, N.-H. Cho, “PL and EL features of p-type porous silicon prepared by electrochemical anodic etching”, Applied Surface Science, Vol. 234, 2004, pp. 256-261.
 M. Ohmukai, M. Taniguchi, Y. Tsutsumi, “Large current density and anodization time needed for strong photoluminescence in porous silicon”, Mat. Sci. Engg. B, Vol. 86, 2001, pp 26-29
 A. Gokarna et al., “Optoelectronic characterization of porous silicon/CdS and ZnS systems”, Phys. Stat. Sol., Vol. 182, 2000, pp 175-178.
 L. K. Pan, Y. K. Ee, C. Q. Sun, G. Q. Yu, Q. Y. Zhang, and B. K. Tay, “Band-gap expansion, core-level shift, and dielectric suppression of porous silicon passivated by plasma fluorination”, J. Vac. Sci. Technol. B, Vol. 22, 2004, pp 583-587.
 T. Katsube, M. Hara, and I. Serizawa, “MOS-type micro-oxygen sensor using LaF3 workable at room temperature,” Jap. J. Appl. Phys., Vol. 29, 1990, pp L-392- L395.
 M. C. Liu, C. C. Lee, M. Kaneko, K. Nakahira and Y. Takano, “Microstructure related properties of lanthanum fluoride films deposited by molybdenum boat evaporation at 193 nm”, Thin Sol. Films, Vol. 492, 2005, pp 45-49.