ABSTRACT This work reports the coating of porous silicon (PS) with LaF3 and its influence on the photoluminescence (PL) property of PS. PS samples, prepared by electrochemical etching in a solution of HF and ethanol, were coated with e-beam evaporated-LaF3 of different thicknesses. It was observed that the thin LaF3 layer on PS led to a good enhancement of PL yield of PS. But with the increasing thickness of LaF3 layer PL intensity of PS was decreasing along with a small blue-shift. It was also observed that all the coated samples showed degradation in PL intensity with time, but annealing could recover and stabilize the degraded PL.
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nullS. Mou, M. Islam and A. Ismail, "Photoluminescence Properties of LaF3-Coated Porous Silicon," Materials Sciences and Applications, Vol. 2 No. 6, 2011, pp. 649-653. doi: 10.4236/msa.2011.26089.
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