MSA  Vol.2 No.6 , June 2011
Photoluminescence Properties of LaF3-Coated Porous Silicon
Abstract: This work reports the coating of porous silicon (PS) with LaF3 and its influence on the photoluminescence (PL) property of PS. PS samples, prepared by electrochemical etching in a solution of HF and ethanol, were coated with e-beam evaporated-LaF3 of different thicknesses. It was observed that the thin LaF3 layer on PS led to a good enhancement of PL yield of PS. But with the increasing thickness of LaF3 layer PL intensity of PS was decreasing along with a small blue-shift. It was also observed that all the coated samples showed degradation in PL intensity with time, but annealing could recover and stabilize the degraded PL.
Cite this paper: nullS. Mou, M. Islam and A. Ismail, "Photoluminescence Properties of LaF3-Coated Porous Silicon," Materials Sciences and Applications, Vol. 2 No. 6, 2011, pp. 649-653. doi: 10.4236/msa.2011.26089.

[1]   A. G. Cullis, L. T. Canham, and P. D. J. Calcott, “The structural and luminescence properties of porous silicon”, J. Appl. Phys., Vol. 82, 1997, pp 909-965.

[2]   R. Boukherroub et al., “Thermal route for chemical modification and photoluminescence stabilization of porous silicon”, Phys. Stat. Sol. (A), Vol. 182, 2000, pp 117-121.

[3]   B. Gelloz et al., “Stabilization of porous silicon electroluminescence by surface passivation with controlled covalent bonds”, Appl. Phys. Lett., Vol. 83, 2003, pp 2342-2344.

[4]   R. Prabakaran et al., “The effects of ZnO coating on the photoluminescence properties of porous silicon for the advanced optoelectronic devices”, J. Non-Crys. Sol., Vol. 354, 2008, pp. 2181-2185.

[5]   M. Rahmani et al., “Photoluminescence enhancement and stabilisation of porous silicon passivated by Iron”, J. Lumi., Vol. 128, 2008, pp 1763-1766

[6]   A. G. Macedo et al., “Enhanced lifetime in porous silicon light-emitting diodes with fluorine doped tin oxide electrodes”, Thin Solid Films, Vol. 517, November 2008, pp 870-873

[7]   E. D. Thoma, H. Shields, Y. Zhang, B. C. McCollum, R. T. Williams, J. Lumin., “EPR and Luminescence Studies of LaF3 and CeF3 under X-Ray and Laser Irradiation”, Vol. 71, 1997, pp 93 - 104.

[8]   D. R. Lide (Ed), Physical Constants of Organic Compounds, in: CRC Handbook of Chemistry and Physics, (87th Edition), Taylor and Francis, Boca Raton, FL 2007.

[9]   L. H. Jian et al., “Efficient visible porous silicon diodes passivated by carbon films”, Chin. Phys. Lett., Vol. 19, 2002, pp 1013-1015

[10]   D. A. Kim, J.-H. Shim, N.-H. Cho, “PL and EL features of p-type porous silicon prepared by electrochemical anodic etching”, Applied Surface Science, Vol. 234, 2004, pp. 256-261.

[11]   M. Ohmukai, M. Taniguchi, Y. Tsutsumi, “Large current density and anodization time needed for strong photoluminescence in porous silicon”, Mat. Sci. Engg. B, Vol. 86, 2001, pp 26-29

[12]   A. Gokarna et al., “Optoelectronic characterization of porous silicon/CdS and ZnS systems”, Phys. Stat. Sol., Vol. 182, 2000, pp 175-178.

[13]   L. K. Pan, Y. K. Ee, C. Q. Sun, G. Q. Yu, Q. Y. Zhang, and B. K. Tay, “Band-gap expansion, core-level shift, and dielectric suppression of porous silicon passivated by plasma fluorination”, J. Vac. Sci. Technol. B, Vol. 22, 2004, pp 583-587.

[14]   T. Katsube, M. Hara, and I. Serizawa, “MOS-type micro-oxygen sensor using LaF3 workable at room temperature,” Jap. J. Appl. Phys., Vol. 29, 1990, pp L-392- L395.

[15]   M. C. Liu, C. C. Lee, M. Kaneko, K. Nakahira and Y. Takano, “Microstructure related properties of lanthanum fluoride films deposited by molybdenum boat evaporation at 193 nm”, Thin Sol. Films, Vol. 492, 2005, pp 45-49.