WJNSE  Vol.4 No.4 , December 2014
High Efficiency SiC Terahertz Source in Mixed Tunnelling Avalanche Transit Time Mode
ABSTRACT
High frequency properties of 4H-SiC double drift region (DDR) Mixed Tunnelling Avalanche Transit Time (MITATT) diodes are studied through computer simulation method. It is interesting to observe that the efficiency of SiC (flat) DDR MITATT diode (16%) is more than 4 times that of Si (flat) DDR MITATT diode (3.59%). In addition, a power output of more than 15 times from the SiC MITATT diode compared to the Si MITATT diode is commendable. A reduced noise measure of 17.71 dB from a low-high-low (lo-hi-lo) structure compared to that of 21.5 dB from a flat structure of SiC is indicative of the favourable effect of tunnelling current on the MITATT diode performance.

Cite this paper
Panda, P. , Padhi, S. and Dash, G. (2014) High Efficiency SiC Terahertz Source in Mixed Tunnelling Avalanche Transit Time Mode. World Journal of Nano Science and Engineering, 4, 143-150. doi: 10.4236/wjnse.2014.44018.
References
[1]   Brezeanu, G. (2007) High Performance Power Diodes on Silicon Carbide and Diamond: The Publishing House of the Romania Academy, 8, 1-14.

[2]   Singh, K., Cooper, J.A., Meloch, M.R., Chow, T.P. and Palmour, J.W. (2004) Silicon Carbide Power Schoottky and Pin Diodes. IEEE Transactions on Electron Devices, 49, 665-672.
http://dx.doi.org/10.1109/16.992877

[3]   Traplee, M.C., Madangagly, V.P., Zhang, Q. and Surdarsan, T.S. (2001) Design Rules for Field Pate Edge Termination in SiC Schottky Diodes. IEEE Transactions on Electron Devices, 48, 2659-2664.
http://dx.doi.org/10.1109/16.974686

[4]   Sheridan, D.C., Niu, G., Merrett, J.N., Cresller, J.D., Ellis, C. and Tin, C.C. (2000) Design and Fabrication of Planar Guard Ring Termination for High Voltage Silicon Carbide Diodes. Solid-State Electronics, 44, 1367-1372.
http://dx.doi.org/10.1016/S0038-1101(00)00081-2

[5]   Karan, D.K., Panda, P. and Dash, G.N. (2013) Effect of Tunneling Current on Noise Characteristics of a 4H-SiC Read Avalanche Diode. Journal of Semiconductors, 34, Article ID: 014001.
http://dx.doi.org/10.1088/1674-4926/34/1/014001

[6]   Luo, Y., Melloch, M.R., Cooper, J.A. and Webb, K.J. (2000) Silicon Carbide IMPATT Oscillator for High-Power Microwave and Millimeter-Wave Generation. IEEE/Cornell Conference on High Performance Devices, Ithaca, 7-9 August 2000, 158-167.
http://dx.doi.org/10.1109/CORNEL.2000.902533

[7]   Yuan, L., Melloch, M.R., Cooper, J.A. and Webb, K.J. (2001) Experimental Demonstration of a Silicon Carbide IMPATT Oscillator. IEEE Electron Device Letters, 22, 266-268.
http://dx.doi.org/10.1109/55.924837

[8]   Zhao, J.H., et al. (2000) Monte Carlo Simulation of 4H-SiC IMPATT Diodes. Semiconductor Science and Technology, 15, 1093-1100.
http://dx.doi.org/10.1088/0268-1242/15/11/314

[9]   Pattanaik, S.R., Dash, G.N. and Mishra, J.K. (2005) Prospects of 6H-SiC for Operation as an IMPATT Diode at 140 GHz. Semiconductor Science and Technology, 20, 299-304.
http://dx.doi.org/10.1088/0268-1242/20/3/008

[10]   Zhang, C.X., et al. (2011) Effects of Bias on the Irradiation and Annealing Responses of 4H-SiC MOS Devices. IEEE Transactions on Nuclear Science, 58, 2925-2929.
http://dx.doi.org/10.1109/TNS.2011.2168424

[11]   Imhoff, E.A., et al. (2011) High Performance Smoothly Tapered Junction Termination Extensions for High Voltage 4H-SiC Devices. IEEE Transactions on Electron Devices, 58, 3395-3400.
http://dx.doi.org/10.1109/TED.2011.2160948

[12]   Zhang, H., Tolbert, L.M. and Ozpinec, B. (2011) Impact of SiC Devices on Hybrid Electric and Plug-In Hybrid Electric Vehicles. IEEE Transactions on Industry Applications, 47, 912-921.
http://dx.doi.org/10.1109/TIA.2010.2102734

[13]   Panda, A.K. and Rao, V.M. (2009) Modeling and Comparative Study on the High Frequency and Noise Characteristics of Different Polytypes of SiC Based IMPATTs. IEEE Asia Pacific Microwave Conference, Singapore, 7-10 December 2009, 1569-1572.
http://dx.doi.org/10.1109/APMC.2009.5384396

[14]   Dash, G.N. and Pati, S.P. (1992) A Generalized Simulation Method for MITATT Mode Operation and Studies on the Influence of Tunnel Current on IMPATT Properties. Semiconductor Science and Technology, 7, 222-230.
http://dx.doi.org/10.1088/0268-1242/7/2/008

[15]   Sze, S.M. (1987) Physics of Semiconductor Devices. 2nd Edition, John Wiley & Sons, New York.

[16]   Dash, G.N., Mishra, J.K. and Panda, A.K. (1996) Noise in Mixed Tunneling Avalanche Transit Time Diode. Solid-State Electronics, 39, 1473-1479.
http://dx.doi.org/10.1016/0038-1101(96)00054-8

 
 
Top