Investigation of the Temperature Dependence of the Oscillation of the Magnetic Susceptibility in Semiconductors
Affiliation(s)
1 Namangan Engineering-Pedagogical Institute, Namangan, Uzbekistan. 2 Namangan Engineering-Technology Institute, Namangan, Uzbekistan.
1 Namangan Engineering-Pedagogical Institute, Namangan, Uzbekistan. 2 Namangan Engineering-Technology Institute, Namangan, Uzbekistan.
ABSTRACT
The temperature dependence of the magnetic
susceptibility oscillations semiconductors was considered in a quantizing
magnetic field. With the help of mathematical modeling of the thermal
broadening of the energy levels, the temperature dependence of the de Haas-van
Alphen effect in quantizing magnetic field was investigated. The influence of
temperature on the de Haas-van Alphen with the help of free energy of electrons 
in semiconductors was determined. Theoretical results of the mathematical
simulation were compared with experimental data for bismuth. Using the proposed
model of the low-temperature , high-temperature oscillation magnetic
susceptibility in semiconductors was calculated.
Cite this paper
Gulyamov, G. , Erkaboev, U. and Sharibaev, N. (2014) Investigation of the Temperature Dependence of the Oscillation of the Magnetic Susceptibility in Semiconductors. Journal of Modern Physics, 5, 1974-1979. doi: 10.4236/jmp.2014.517192.
Gulyamov, G. , Erkaboev, U. and Sharibaev, N. (2014) Investigation of the Temperature Dependence of the Oscillation of the Magnetic Susceptibility in Semiconductors. Journal of Modern Physics, 5, 1974-1979. doi: 10.4236/jmp.2014.517192.
References
[1] Tsidilkovsky, I.M. (1972) Electrons and Holes in Semiconductors. Nauka, Moscow, Chapter 6, 526. [2] Schoenberg, D. (1986) Magnetic Oscillations in Metals. Wiley, New York, Chapter 1, 25. [3] Bagraev, N.T., Brilinskaya, E.S., Gets, D.S., Klyachkin, L.E., Malyarenko, A.M. and Novels, V.V. (2011) Fizika i Tekhnika Poluprovodnikov, 45, 1503-1508. [4] Bagraev, N.T., Brilinskaya, E.S., Danilovsky, E.Yu., Klyachkin, L.E., Malyarenko, A.M. and Romanov, V.V. (2012) Fizika i Tekhnika Poluprovodnikov, 46, 90-95. [5] Gulyamov, G. and Sharibaev, N.Yu. (2011) Fizika i Tekhnika Poluprovodnikov, 45, 178-182. [6] Gulyamov, G., Sharibaev, N.Yu. and Erkaboev, U.I. (2012) Fyzicheckaya Injeneriya Poverkhnosti, 10, 366-370. [7] Gulyamov, G., Karimov, I.N., Sharibaev, N.Yu. and Erkaboev, U.I. (2010) Uzbek Journal of Physics, 12, 143-146. [8] Gulyamov, G., Sharibaev N.Y. and Erkaboev, U.I. (2013) World Journal of Condensed Matter Physics, 3, 216-220.
http://dx.doi.org/10.4236/wjcmp.2013.34036 [9] Gulyamov, G., Erkaboev, U.I. and Sharibaev, N.Y. (2013) Physical Surface Engineering, 11, 289-292. [10] Gulyamov, G., Erkaboev, U.I. and Sharibaev, N.Y. (2014) Journal of Modern Physics, 5, 680-685.
http://dx.doi.org/10.4236/jmp.2014.58079 [11] Gulyamov, G., Erkabaev, U.I. and Sharibaev, N.Yu. (2014) Semiconductors, 48, 1287-1292. [12] Gulyamov, G., Sharibaev, N.Y. and Erkaboev, U.I. (2014) Fyzicheckaya Injeneriya Poverkhnosti, 11, 9-13. [13] Landau, L.D. and Lifshitz, E.M. (1976) Statistical Physics. Nauka, Moscow, Part 1, Chapter 3, 109. [14] Abrikosov, A.A. (1987) Fundamentals of the Theory of Metals. Nauka, Moscow, Chapter 10, 156. [15] Anselm, A.I. (1978) Introduction to the Theory of Semiconductors. Nauka, Moscow, Chapter 6, 367.
[1] Tsidilkovsky, I.M. (1972) Electrons and Holes in Semiconductors. Nauka, Moscow, Chapter 6, 526. [2] Schoenberg, D. (1986) Magnetic Oscillations in Metals. Wiley, New York, Chapter 1, 25. [3] Bagraev, N.T., Brilinskaya, E.S., Gets, D.S., Klyachkin, L.E., Malyarenko, A.M. and Novels, V.V. (2011) Fizika i Tekhnika Poluprovodnikov, 45, 1503-1508. [4] Bagraev, N.T., Brilinskaya, E.S., Danilovsky, E.Yu., Klyachkin, L.E., Malyarenko, A.M. and Romanov, V.V. (2012) Fizika i Tekhnika Poluprovodnikov, 46, 90-95. [5] Gulyamov, G. and Sharibaev, N.Yu. (2011) Fizika i Tekhnika Poluprovodnikov, 45, 178-182. [6] Gulyamov, G., Sharibaev, N.Yu. and Erkaboev, U.I. (2012) Fyzicheckaya Injeneriya Poverkhnosti, 10, 366-370. [7] Gulyamov, G., Karimov, I.N., Sharibaev, N.Yu. and Erkaboev, U.I. (2010) Uzbek Journal of Physics, 12, 143-146. [8] Gulyamov, G., Sharibaev N.Y. and Erkaboev, U.I. (2013) World Journal of Condensed Matter Physics, 3, 216-220.
http://dx.doi.org/10.4236/wjcmp.2013.34036 [9] Gulyamov, G., Erkaboev, U.I. and Sharibaev, N.Y. (2013) Physical Surface Engineering, 11, 289-292. [10] Gulyamov, G., Erkaboev, U.I. and Sharibaev, N.Y. (2014) Journal of Modern Physics, 5, 680-685.
http://dx.doi.org/10.4236/jmp.2014.58079 [11] Gulyamov, G., Erkabaev, U.I. and Sharibaev, N.Yu. (2014) Semiconductors, 48, 1287-1292. [12] Gulyamov, G., Sharibaev, N.Y. and Erkaboev, U.I. (2014) Fyzicheckaya Injeneriya Poverkhnosti, 11, 9-13. [13] Landau, L.D. and Lifshitz, E.M. (1976) Statistical Physics. Nauka, Moscow, Part 1, Chapter 3, 109. [14] Abrikosov, A.A. (1987) Fundamentals of the Theory of Metals. Nauka, Moscow, Chapter 10, 156. [15] Anselm, A.I. (1978) Introduction to the Theory of Semiconductors. Nauka, Moscow, Chapter 6, 367.