MSA  Vol.2 No.5 , May 2011
Investigation by AES, EELS and TRIM Simulation Method of InP(100) Subjected to He+ and H+ Ions Bombardment
ABSTRACT
Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy (EELS) have been performed in order to investigate the InP(100) surface subjected to ions bombardment. The InP(100) surface is always contaminated by carbon and oxygen revealed by C-KLL and O-KLL AES spectra recorded just after introduction of the sample in the UHV spectrometer chamber. The usually cleaning process of the surface is the bombardment by argon ions. However, even at low energy of ions beam (300 eV) indium clusters and phosphorus vacancies are usually formed on the surface. The aim of our study is to compare the behaviour of the surface when submitted to He+ or H+ ions bombardment. The helium ions accelerated at 500 V voltage and for 45 mn allow removing contaminants but induces damaged and no stoichiometric surface. The proton ions were accelerated at low energy of 500 eV to bombard the InP surface at room temperature. The proton ions broke the In-P chemical bonds to induce the formation of In metal islands. Such a chemical reactivity between hydrogen and phosphorus led to form chemical species such as PH and PH3, which desorbed from the surface. The chemical susceptibly and the small size of H+ advantaged their diffusion into bulk. Since the experimental methods alone were not able to give us with accuracy the disturbed depth of the target by these ions. We associate to the AES and EELS spectroscopies, the TRIM (Transport and Range of Ions in Matter) simulation method in order to show the mechanism of interaction between Ar+, He+ or H+ ions and InP and determine the disturbed depth of the target by argon, helium or proton ions.

Cite this paper
nullM. Ghaffour, A. Abdellaoui, A. Ouerdane, M. Bouslama and C. Jardin, "Investigation by AES, EELS and TRIM Simulation Method of InP(100) Subjected to He+ and H+ Ions Bombardment," Materials Sciences and Applications, Vol. 2 No. 5, 2011, pp. 421-426. doi: 10.4236/msa.2011.25055.
References
[1]   M. Yamada, A.K. Wahi, T. Kendelewicz and W. E. Spicer, “Schottky Barrier Formation on InP(110) Passivated with One Monolayer of Sb,” Applied Surface Science, Vol. 56-58, Part 1, 1992, pp. 325-329. doi:10.1016/0169-4332(92)90251-R

[2]   B. Sautreuil, P. Viktorovich and R. Blanchet, “Evidence for Interfacial Defects in Metal-Insulator-InP Structures Induced by the Insulator Deposition,” Journal of Applied Physics, Vol. 57, 1985, pp. 2322-2324. doi:10.1063/1.334335

[3]   C. Jardin, D. Robert, B. Achard, B. Gruzza and C. Pariset, “An AES and EELS Study of InP(100) Surface Subjected to Argon Ion Bombardment,” Journal of Surface and Interface Analysis, Vol. 10, No. 6, 1987, pp. 301-309. doi:10.1002/sia.740100606

[4]   A. Ouerdane, M. Bouslama, M. Ghaffour, A. Abdellaoui, K. Hamaida, Z. Lounis, Y. Monteil, N. Berrouachedi and A. Ouhaibi, “Study by EELS and EPES of the Stability of InPO4/InP System,” Journal of Applied Surface Science, Vol. 254, No. 2, September 2008, pp. 7394-7399. doi:10.1016/j.apsusc.2008.05.345

[5]   S. Tizi, Z. Benamara, M. Chellali, A. Taibi, B. Gruzza, S. Merle and C. Robert, “Effect of InSb Buffer Layer in MIS Structures Based on InP,” Journal Vacuum, Vol. 62, No. 4, June 2001, pp. 315-322. doi:10.1016/S0042-207X(00)00427-9

[6]   N. I. Plusnin, “Application of AES and EELS for Surface/ Interface Characterization,” Journal of Electron Spectroscopy and Related Phenomena, Vol. 137-140, 2004, pp. 161-164. doi:10.1016/j.elspec.2004.02.091

[7]   M. Ghaffour, M. Bouslama, Z. Lounis, A. Nouri, C. Jardin, Y. Monteil and H. Dumont, “The Effect of Heating on InGaAs/InP(100) and InPO4/InP(100),” Journal of Electron Spectroscopy and Related Phenomena, Vol. 134, No. 1, January 2004, pp. 81-85. doi:10.1016/j.elspec.2003.10.001

[8]   A. Abdellaoui, M. Ghaffour, A. Ouerdane, K. Hamaida, Y. Monteil, N. Berrouachedi, Z. Lounis and M. Bouslama, “AES, EELS and TRIM Investigation of InSb and InP Compounds Subjected to Ar+ Ions Bombardment,” Journal of Applied Surface Science, Vol. 254, No. 13, April 2008, pp. 4024-4031. doi:10.1016/j.apsusc.2007.12.038

[9]   Z. Lounis, M. Bouslama, N. Berrouachedi, C. Jardin, L. Auvray, A. Abdellaoui, A. Ouerdane and M. Ghaffour, “Study by AES and EELS Spectroscopies of Antimony and Phosphorus Evaporated on Massive Indium and on Cleaned InP,” Journal Vacuum, Vol. 82, No. 5, January 2008, pp. 529-534. doi:10.1016/j.vacuum.2007.08.002

[10]   A. Nouri, Z. Lounis, A. Ouerdane, M. Ghaffour, M. Bouadi, H. Dumont, L. Auvray and M. Bouslama, “The Behaviour of Ternary Compounds InGaAs and GaAsN Subjected to Electron Irradiation,” Journal Vacuum, Vol. 81, No. 8, March 2007, pp. 979-985. doi:10.1016/j.vacuum.2006.12.001

[11]   M. Bouslama, Y. Monteil, G. Younes, C. Jardin and M. Ghamnia, “Effects of the Electron Beam on InP(100),” Journal Vacuum, Vol. 47, No. 1, January, 1996, pp. 27-33. doi:10.1016/0042-207X(95)00173-5

[12]   C. Jardin, D. Robert, B. Achard, B. Gruzza and C. Pariset, “Some Practical Applications of Elastic Peak Electron Spectroscopy,” Journal of Analytical Electron Spectroscopy, Vol. 19, No. 1-12, 1992, pp. 5-8.

[13]   B. M. Duc, C. Jardin, J. P. Gauthier and P. Michel, “A Low-Energy Electron Spectrometer Using Concentric Hemispheres and a Grid Retarding Field,” Journal of Physics and Instruments, Vol. 12, 1979, pp. 43-49.

[14]   D. Gautard, J. L. Laporte, M. Cadoret and C. Pariset, “Ellipsometric Study of Surface Treatments Carried out on (100)InP inside VPE Reactor,” Journal of Crystal Growth, Vol. 71, No. 1, January-February 1985, pp. 125-131. doi:10.1016/0022-0248(85)90052-1

[15]   C. Jardin and M. Bouslama “Electron Energy Loss Spectroscopy at Different Surface Sensitivities,” Journal of Microscopy and Electron Spectroscopy, Vol. 13, No. 5, 1988, pp. 395-404.

[16]   L. Bideux, Y. O. Metidji, B. Gruzza and V. Matolin, “Study of InP(100) Surface Irradiation by X-Ray Photoelectron Spectroscopy,” Surface and Interface Analysis, Vol. 34, No. 1, 2002, pp. 712-715. doi:10.1002/sia.1394

[17]   S. Abdellaoui, B. Gruzza, C. Pariset, M. Bouslama, C. Jardin and D. Robert, “Study of Sb Condensation on InP(100) Substrates Previously Cleaned by Low Energy Ar+ Ion Beam,” Journal of Surface Science Letters, Vol. L21, 1989, pp. 208-215.

[18]   M. Bouslama, Z. Lounis, M. Ghaffour, M. Ghamnia and C. Jardin, “The Study of InPO4/InP(100) by EELS and AES,” Journal Vacuum, Vol. 65, No. 2, April 2002, pp. 185-189. doi:10.1016/S0042-207X(01)00480-8

[19]   M. Bouslama, M. Ghamnia, B. Gruzza, F. Miloua and C. Jardin, “AES and EELS Analysis of the Interaction between Phosphorus and Metallic Indium,” Journal of Electron Spectroscopy and Related Phenomena, Vol. 68, May 1994, pp. 377-382. doi:10.1016/0368-2048(94)02137-6

[20]   M. Bouslama, ‘Etude par spectroscopies d’électrons Auger et de pertes d’énergie des semi-conducteurs InP(100) et InSb(100),” Ph.D. Dissertation, University of Claude Bernard, LyonI, France, 1989.

[21]   A. Porte, B. Gruzza, C. A. Bondot, L. Bideux, C. Jardin and G. Gergely, “The Interaction of Hydrogen with the InP(100) Substrates Studied by AES, EPES and EELS,” Journal of Electron Spectroscopy and Related Phenomena, Vol. 68, May 1994, pp. 391-397. doi:10.1016/0368-2048(94)02139-2

[22]   J.A. Schaefer, “Hydrogen Interaction with Semiconductor Surfaces,” Journal of Surface Science, Vol. 178, No. 1-3, December 1986, pp. 90-95. doi:10.1016/0039-6028(86)90284-0

[23]   F. Proix, O. M’hamedi, M. Cherchour and C. A. Sebenne, “Study of the Interaction of Atomic and Ionized Hydrogen with Cleaved Surfaces of InP(110),” Journal Le vide, Les couches minces, Vol. 41, 1986, pp. 189-195.

[24]   L. Nasdala, M. Wenzel, M. Andrut, R. Wirth and P. Blaun, “The Nature of the Radiohaloes in Biotite: Experimental Studies and Modelling,” Mineralogical Society of America, Vol. 86, No. 4, 2001, pp. 498-512.

[25]   W. Moller and S. Mukhrjee, “Radiation Effects and Defects in Solids: Incorporating Plasma Science and Plasma Technology,” Computer Simulation of Ion-Assisted Thin Film Deposition, Vol. 141, No. 1-4, 1997, pp. 73-81.

 
 
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