[1] C. Macilwain, “Computer Hardware: Silicon Down to the Wire,” Nature, Vol. 436, No. 22-23, 2005, pp. 22-23.
[2] L. Ozyuzer, A. E. Koshelev, C. Kurter, N. Gopalsami, Q. Li, M. Tachiki, K. Kadowaki, T. Yamamoto, H. Minami, H. Yamaguchi, T. Tachiki, K. E. Gray, W.-K. Kwok and U. Welp, “Emission of Coherent THz Radiation from Superconductors,” Science, Vol. 318, No. 5854, 2007, pp. 1291-1293. doi:10.1126/science.1149802
[3] N. T. Bagraev, W. Gehlhoff, L. E. Klyachkin, A. M. Malyarenko, V. V. Romanov and S. A. Rykov, “Superconductivity in Silicon Nanostructures,” Physica C, Vol. 437-438, 2006, pp. 21-24. doi:10.1016/j.physc.2005.12.011
[4] E. A. Ekimov, V. A. Sidorov, E. D. Bauer, N. N. Mel’nik, N. J. Curro, J. D. Thompson and S. M. Stishov, “Superconductivity in Diamond,” Nature, Vol. 428, 2004, pp. 542-545. doi:10.1038/nature02449
[5] N. T. Bagraev, A. D. Bouravleuv, L. E. Klyachkin, A. M. Malyarenko, W. Gehlhoff, V. K. Ivanov and I. A. Shelykh, “Quantized Conductance in Silicon Quantum Wires,” Semiconductors, Vol. 36, No. 4, 2002, pp. 439- 460. doi:10.1134/1.1469195
[6] N. T. Bagraev, A. D. Bouravleuv, W. Gehlhoff, L. E. Klyachkin, A. M. Malyarenko, V. V. Romanov and S. A. Rykov, “Fractal Self-Assembled Nanostructures on Monocrystalline Silicon Surface,” Proceedings of the 6th International Conference on Diffusion in Materials, Cracow, 2005; pp. 1049-1054.
[7] N. T. Bagraev, V. K. Ivanov, L. E. Klyachkin and I. A. Shelykh, “Spin Depolarization in Quantum Wires Polarized Spontaneously in a Zero Magnetic Field,” Physical Revive B, Vol. 70, No. 15, 2004, pp. 155315-1-9.
[8] N. T. Bagraev, A. D. Bouravleuv, L. E. Klyachkin, A. M. Malyarenko, W. Gehlhoff, Y. I. Romanov and S.A. Rykov, “Local Tunneling Spectroscopy of Silicon Nanostructures,” Semiconductors, Vol. 39, No. 6, 2005, pp. 716-728.
[9] J. Robertson, “Electronic Structure of Amorphous Semiconductors,” Advances in Physics, Vol. 32, No. 3, 1983, pp. 361-452. doi:10.1080/00018738300101571
[10] G. J. Gerardi, E. H. Poindexter, P. J. Caplan and N. M. Johnson, “Interface Traps and Pb Centers in Oxidized Silicon Wafers,” Applied Physics Letterrs, Vol. 49, No. 6, 1986, pp. 348-351. doi:10.1063/1.97611
[11] N. T. Bagraev, W. Gehlhoff and L. E. Klyachkin, “Cyclotron Resonance in Heavily Doped Silicon Quantum Wells,” Solid State Phenomena, Vol. 47-48, 1995, pp. 589-594.
[12] W. Gehlhoff, N. T. Bagraev and L. E. Klyachkin, “Shallow and Deep Centres in Heavily Doped Silicon Quantum Wells,” Materials Science Forum, Vol. 196-201, 1995, pp. 467-472.
[13] N. T. Bagraev, N. G. Galkin, W. Gehlhoff, L. E. Klyachkin, A. M. Malyarenko and I. A. Shelykh, “Spin Interference in Silicon One-Dimensional Rings,” Journal of Physics: Conference Series, Vol. 61, 2007, pp. 56-60. doi:10.1088/1742-6596/61/1/012
[14] J. P. Kotthaus and R. Ranvaud, “Cyclotron Resonance of Holes in Surface Space Charge Layers on Si,” Physical Review. B, Vol. 15, No. 12, 1977, pp. 5758-5761. doi:10.1103/PhysRevB.15.5758
[15] N. T. Bagraev, A. D. Bouravleuv, L. E. Klyachkin, A. M. Malyarenko, S. A. Rykov, “Self-Ordered Microcavities Embedded in Ultra-shallow Silicon p-n Junctions,” Semiconductors, Vol. 34, No. 6, 2000, pp. 700-711. doi:10.1134/1.1188058
[16] B. X. Li, P. L. Cao and D. L. Que, “Distorted Icosahedral Cage Structure of Si60 Clusters,” Physical Review B, Vol. 61, No. 3, 2000, pp.1685-1687. doi:10.1103/PhysRevB.61.1685
[17] A. Slaoui, E. Fogarassy, J. C. Muller and P. Siffert, “Study of Some Optical and Electrical Properties of Heavily Doped Silicon Layers,” J. de Physique Colloq., Vol. 44, No. C5 44, 1983, pp. 65-71.
[18] P. W. Anderson, “Model for the Electronic Structure of Amorphous Semiconductors,” Physical Review Letters, Vol. 34, No. 15, 1975, pp. 953-955. doi:10.1103/PhysRevLett.34.953
[19] G. D. Watkins, “Negative-U Properties for Defects in Solids,” Festkoerperprobleme, Vol. 24, 1984, pp. 163- 184.
[20] R. A. Street and N. F. Mott, “States in the Gap in Glassy Semiconductors,” Physical Review Letters, Vol. 35, No. 19, 1975, pp. 1293-1296. doi:10.1103/PhysRevLett.35.1293
[21] M. Kastner, D. Adler and H. Fritzsche, “Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors,” Physical Review Letters, Vol. 37, No. 22, 1976, pp. 1504-1507. doi:10.1103/PhysRevLett.37.1504
[22] G. A. Baraff, E. O. Kane and M. Schlüter, “Theory of the Silicon Vacancy: an Anderson Negative-U System,” Physical Review B, Vol. 21, No. 12, 1980, pp. 5662- 5686. doi:10.1103/PhysRevB.21.5662
[23] N. T. Bagraev and V. A. Mashkov, “Tunneling Negative-U Centers and Photo-Induced Reactions in Solids,” Solid State Communications, Vol. 51, No 7, 1984, pp. 515-521. doi:10.1016/0038-1098(84)91024-X
[24] N. T. Bagraev, V. A. Mashkov, “A Mechanism for Two-Electron Capture at Deep Level Defects in Semiconductors, Solid State Communications,” Solid State Communications, Vol. 65, No. 12, 1988, pp. 1111-1117. doi:10.1016/0038-1098(88)90904-0
[25] N. T. Bagraev, N. G. Galkin, W. Gehlhoff, L. E. Klyachkin and A. M. Malyarenko, “Phase and Amplitude Response of the ‘0.7 Feature’ Caused by Holes in Silicon One-Dimensional Wires and Rings,” J. Phys.:Condens. Matter, Vol. 20, 2008, pp. 164202-1-12. doi:10.1088/0953-8984/20/16/164202
[26] E. ?imánek, “Superconductivity at Disordered Interfaces,” Solid State Communications, Vol. 32, No 9, 1979, pp. 731-734.
[27] C. S. Ting, D. N. Talwar, K. L. Ngai, “Possible Mechanism of Superconductivity in Metal-Semiconductor Eutectic Alloys,” Physical Review Letters, Vol. 45, No 14, 1980, pp. 1213-1216. doi:10.1103/PhysRevLett.45.1213
[28] A. Alexandrov, J. Ranninger, “Bipolaronic supercond- uctivity,” Phys. Rev. B 24, No. 3, 1981, pp. 1164-1169. doi:10.1103/PhysRevB.24.1164
[29] B. K. Chakraverty, “Bipolarons and Superconductivity,” Journal de Physique, Vol. 42, No. 9, 1981, pp. 1351- 1356.
[30] A. S. Alexandrov and N. F. Mott, “Bipolarons,” Rep. Prog. Phys., Vol. 57, No. 12, 1994, pp. 1197-1288. doi:10.1088/0034-4885/57/12/001
[31] A. F. Andreev, “The Thermal Conductivity of the Intermediate State in Superconductors,” Soviet Physics-JETP, Vol. 19, No. 6, 1964, pp. 1228-1232.
[32] T. M. Klapwijk, “Proximity Effect from an Andreev Perspective,” Journal of Superconductivity: Incorporating Novel Magnetism, Vol. 17, No. 5, 2004, pp. 593- 611.
[33] J. A. van Dam, Y. V. Nazarov, E. P.A. M. Bakkers, S. De Franceschi and P. Kouwenhoven, “Supercurrent Reversal in Quantum Dots,” Nature, Vol. 442, No. 7103, 2006, pp. 667-670. doi:10.1038/nature05018
[34] P. Jarillo-Herrero, J. A. van Dam and L. P. Kouwenhoven, “Quantum Supercurrent Transistors in Carbon Nanotubes,” Nature, Vol. 439, 2006, pp. 953-956. doi:10.1038/nature04550
[35] X. Jie, A. Vidan, M. Tinkham, R. M. Westervelt and Ch. Lieber, “Ge/Si Nanowire Mesoscopic Josephson Junctions,” Nature Nanotechnology, Vol. 1, No. 3, December 2006, pp. 208-213.
[36] O. Trovarelli, M. Weiden, R. Müller-Reisener, M. Gómez-Berisso, P. Gegenwart, M. Deppe, C. Geibel, J. G. Sereni and F. Steglich, “Evolution of Magnetism and Superconductivity In CeCu2(Si1-xGex)2, ” Physical Review B, Vol. 56, No. 2, 1997, pp. 678-685. doi:10.1103/PhysRevB.56.678
[37] A. K. Geim, K. S. Novoselov, “The rise of Graphene,” Nature Materials, Vol. 6, No. 3, 2007, pp. 183-191. doi:10.1038/nmat1849
[38] N. R. Werthamer, E. Helfand, P. C. Hohenberg, “Temperature and Purity Dependence of the Superconducting Critical Field, Hc2. III. Electron Spin and Spin-Orbit Effects,” Physical Review, Vol. 147, No. 1, 1966, pp. 295-302. doi:10.1103/PhysRev.147.295
[39] D. Y. Vodolazov, D. S. Golubovi?, F. M. Peeters and V. V. Moshchalkov, “Enhancement and Decrease of Critical Current Due to Suppression of Superconductivity by a Magnetic Field,” Physical Review B, Vol. 76, No. 13, 2007, pp. 134505-1-7. doi:10.1103/PhysRevB.76.134505
[40] C. C. de Souza Silva, J. van de Vondel, M. Morelle and V. V. Moshchalkov, “Controlled Multiple Reversals of a Ratchet Effect,” Nature, Vol. 440, No. 7084, 2006, pp. 651-654. doi:10.1038/nature04595
[41] N. T. Bagraev, N. G. Galkin, W. Gehlhoff, L. E. Klyachkin, A. M. Malyarenko and I.A. Shelykh, “Spin Interference in Silicon One-Dimensional Rings,” Physica E, Vol. 40, 2008, pp. 1338-1340. doi:10.1016/j.physe.2007.08.079
[42] N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko and W. Gehlhoff, “High Temperature Single-Hole Silicon Transistors,” Superlattices and Microstructures, Vol. 23, No. 6, 1998, pp. 1333-1338. doi:10.1006/spmi.1996.0360
[43] H. Suderow, E. Bascones, A. Izquierdo, F. Guinea and S. Vieira, “Proximity Effect and Strong-Coupling Superconductivity in Nanostructures Built with an STM,” Physical Review B, Vol. 65, No. 10, 2002, pp. 100519R- 1-4.
[44] ?. Fischer, M. Kugler, I. Maggio-Aprile, Ch. Berthod and Ch. Renner, “Scanning Tunneling Spectroscopy of High-Temperature Superconductors,” Reviews of Modern Physics, Vol. 79, No. 1, 2007, pp. 353-419. doi:10.1103/RevModPhys.79.353
[45] R. Laiho, M. M. Afanasjev, M. P. Vlasenko and L. S. Vlasenko, “Electron Exchange Interaction in S = 1 Defects Observed by Level Crossing Spin Dependent Microwave Photoconductivity in Irradiated Silicon,” Physical Review Letters, Vol. 80, No. 7, 1998, pp. 1489-1492. doi:10.1103/PhysRevLett.80.1489
[46] N. T. Bagraev, A. D. Bouravleuv, W. Gehlhoff, L. E. Klyachkin, A. M. Malyarenko and V. V. Romanov, “Electron- Dipole Resonance of Impurity Centres Embedded in Silicon Microcavities,” Physica B, Vol. 340-342, 2003, pp. 1078- 1081. doi:10.1016/j.physb.2003.09.184
[47] N. T. Bagraev, A. D. Bouravleuv, W. Gehlhoff, L. E. Klyachkin, A. M. Malyarenko and V. V. Romanov, “Erbium- Related Centres Embedded in Silicon Microcavities,” Physica B, Vol. 340-342, 2003, pp. 1074-1077. doi:10.1016/j.physb.2003.09.239
[48] V. L. Ginzburg, “On Surface Superconductivity,” Physical Letters, Vol. 13, No. 2, 1964, pp. 101-104.
[49] A. I. Larkin and Y. N. Ovchinnikov, “Nonuniform State of Superconductors,” Soviet Physics-JETP, Vol. 20, No. 3, 1965, pp. 762-770.
[50] P. Fulde and R. A. Ferrell, “Superconductivity in a Strong Spin-Exchange Field,” Physical Review, Vol. 135, No. 3A, 1964, pp. A550-A563. doi:10.1103/PhysRev.135.A550
[51] W. A. Little, “Higher Temperatures: Theoretical Models,” Physica, Vol. 55, 1971, pp. 50-54. doi:10.1016/0031-8914(71)90240-0
[52] S. M. Cronenwett, H. J. Lynch, D. Goldhaber-Gordon, L. P. Kouwenhoven, C. M. Marcus, K. Hirose, N. S. Wingreen and V. Umansky, “Low-Temperature Fate of the 0.7 Structure in a Point Contact: A Kondo-Like Correlated State in an Open System,” Physical Review Letters, Vol. 88, No. 22, 2002, pp. 226805-1-4. doi:10.1103/PhysRevLett.88.226805
[53] J. P. Eisenstein, T. J. Gramila, L. N. Pfeiffer and K. W. West, “Probing a Two-Dimensional Fermi Surface by Tunneling,” Physical Review B, Vol. 44, No. 12, 1991, pp. 6511-6514. doi:10.1103/PhysRevB.44.6511
[54] N. T. Bagraev, W. Gehlhoff, L. E. Klyachkin, A. A. Kudryavtsev, A. M. Malyarenko, G. A. Oganesyan, D. S. Poloskin and V. V. Romanov, “Spin-Dependent Transport of Holes in Silicon Quantum Wells Confined by Superconductor Barriers,” Physica C, Vol. 468, No. 7-10, 2008, pp. 840-843.doi:10.1016/j.physc.2007.11.060