WJNSE  Vol.4 No.2 , June 2014
The Role of Sputtering Current on the Optical and Electrical Properties of Si-C Junction
Abstract: The effect of sputtering current that flow in a carbon rod on the structural and transport properties of Si-C junction is studied. Si-C junction is fabricated by plasma sputtering in Argon gas atmosphere without catalysts with thickness of 20, 40 and 60 nm. Images of the specimen by scanning electron microscope (SEM) and atomic force microscope (AFM) show that the carbon layer is as carbon nanotubes with diameters about 20 - 30 nm. X-ray and Raman spectrums show peak characteristics of the carbon nanotubes, the G and D bands appear for all thicknesses indicating free of defect carbon nanotubes. Two parameters about the thickness of the carbon layer and the sputtering current for different thicknesses and currents were studied. Nanotubes evidence was clear. We noticed that the sputtering current and thickness of layers affect the structure of CNT layer leading to the formation of grains. Increasing plasma current led to decrease grain formation however increasing thickness ends to increase grain size; moreover it led to amorphous structure formation and this was proved through X-ray, Raman spectra and AFM images.
Cite this paper: Uonis, M. , Mustafa, B. and Ezzat, A. (2014) The Role of Sputtering Current on the Optical and Electrical Properties of Si-C Junction. World Journal of Nano Science and Engineering, 4, 90-96. doi: 10.4236/wjnse.2014.42012.

[1]   Valentini, L., Armentano, I., Kenny, J.M., Lozzi, L. and Santucci, S. (2003) Pulsed Plasma-Induced Alignment of Carbon Nanotubes. Materials Letters, 57, 3699-3704.

[2]   Lehman, J.H., Terrones, M., Mansfield, E., Hurst, K.E. and Meunier, V. (2011) Evaluating the Characteristics of Multiwall Carbon Nanotubes. Carbon, 49, 2581-2602.

[3]   Hofmann, S., Kleinsorge, B., Ducati, C., Ferrari, A.C. and Robertson, J. (2004) Low-Temperature Plasma Enhanced Chemical Vapor Deposition of Carbon Nanotubes. Diamond and Related Materials, 13, 1171-1176.

[4]   Choi, Y.C., Bae, D.J., Lee, Y.H. and Lee, B.S. (2000) Growth of Carbon Nanotubes by Microwave Plasma-Enhanced Chemical Vapor Deposition at Low Temperature. Journal of Vacuum Science & Technology A, 18, 1864-1868.

[5]   Muratore, C., Reed, A.N., Bultman, J.E., Ganguli, S., Cola, B.A. and Voevodin, A.A. (2013) Nanoparticle Decoration of Carbon Nanotubes by Sputtering. Carbon, 57, 274-281.

[6]   Ezzat, A.M., Mustafa, B.M. and Uonis, M.M. (2014) Fabrication of Si-CNT Junction by Plasma Sputtering of Graphite Rods on Silicon Wafers. International Journal of Advanced Research, 2, 108-113.

[7]   Costa, S., Borowiak-Palen, E., Kruszyńska, M., Bachmatiuk, A. and Kaleńczuk, R.J. (2008) Characterization of Carbon Nanotubes by Raman Spectroscopy. Materials Science-Poland, 26, 433-441.

[8]   Bokova, S.N., Obraztsova, E.D., Grebenyukov, V.V., Elumeeva, K.V., Ishchenko, A.V. and Kuznetsov, V.L. (2010) Raman Diagnostics of Multi-Wall Carbon Nanotubes with a Small Wall Number. Physica Status Solidi (B), 247, 2827-2830.

[9]   Jorio, A., Pimenta, M.A., Souza Filho, A.G., Saito, R., Dresselhaus, G. and Dresselhaus, M.S. (2003) Characterizing Carbon Nanotube Samples with Resonance Raman Scattering. New Journal of Physics, 5, 139.1-139.17.

[10]   Murphy, H., Papakonstantinou, P. and Okpalugo, T.I.T (2006) Raman Study of Multiwalled Carbon Nanotubes Functionalized with Oxygen Groups. Journal of Vacuum Science & Technology B, 24, 715.

[11]   Zdrojek, M., Gebicki, W., Jastrzebski, C., Melin, T. and Huczko, A. (2004) Studies of Multiwall Carbon Nanotubes Using Raman Spectroscopy and Atomic Force Microscopy. Solide State Phenomena, 99, 265.

[12]   Bellucci, S., Gaggiotti, G., Marchetti, M., Micciulla, F., Mucciato, R. and Regi, M. (2007) Atomic Force Microscopy Characterization of Carbon Nanotubes. Journal of Physics: Conference Series, 61, 99-104.