JST  Vol.4 No.2 , June 2014
The Effect of Temperature and Doping Level on the Characteristics of Piezoresistive Pressure Sensor
Piezoresistive pressure sensors based on silicon have a large thermal drift because of their high sensitivity to temperature. The study of the effect of the temperature and doping level on characteristics of these sensors is essential to define the parameters that cause the output characteristics drift. In this study, we adopted the model of Kanda to determine the effect of the temperature and of doping level on the piezoresistivity of the Silicon monocrystal. This is to represent P(N,T) and for p-type silicon as functions of impurity concentration for different temperatures. This allows us to see the effect of temperature and doping concentration on the output characteristics of the sensor. Finally, we study the geometric influence parameters and doping on these characteristics to optimize the sensor performance. This study allows us to predict the sensor behavior against temperature and to minimize this effect by optimizing the doping concentration.

Cite this paper
Abdelaziz, B. , Fouad, K. and Kemouche, S. (2014) The Effect of Temperature and Doping Level on the Characteristics of Piezoresistive Pressure Sensor. Journal of Sensor Technology, 4, 59-65. doi: 10.4236/jst.2014.42007.
[1]   Smith, C.S. (1954) Piezoresistance Effect in Germanium and Silicon. Physical Review, 94, 42-49.

[2]   Kerrour, F., Boukabache, A. and Pons, P. (2012) Modelling of Thermal Behavior N-Dope Silicon Resistor. Journal of Sensor Technology, 2, 132-137.

[3]   Kerr, D. and Milnes, A. (1963) Piezoresistance of Diffused Layers in Cubic Semiconductors. Journal of Applied Physics, 34, 727-731.

[4]   Othmani, R., Benmoussa, N. and Benyoucef, B. (2011) The Thermal Drift Characteristics of Piezoresistive Pressure Sensor. Physics Procedia, 21, 47-52.

[5]   Boukabache, A. and Pons, P. (2002) Doping Effects on Thermal Behaviour of Silicon Resistor. Electronics Letters, 38, 342-343.

[6]   Cho, C.H., Jaeger, R.C. and Suhling, J.C. (2008) Characterization of the Temperature Dependence of the Piezoresistive Coefficients of Silicon from -150C to +125C. IEEE Sensors Journal, 8, 1455-1468.

[7]   Kanda, Y. (1982) A Graphical Representation of the Piezoresistance Coefficients in Silicon. IEEE Transactions on Electron Devices, ED-29, 64-70.

[8]   Mohammed, A.A.S., Moussa, W.A. and Edmond, L. (2008) High Sensitivity MEMS Strain Sensor: Design and Simulation. Sensors, 8, 2642-2661.

[9]   Mohammed, A.A.S., Moussa, W.A. and Edmond, L. (2011) High-Performance Piezoresistive MEMS Strain Sensor with Low Thermal Sensitivity. Sensors, 11, 1819-1846.

[10]   Lenkkeri, J.K. (1986) Nonlinear Effects in the Piezoresistivity of p-Type Silicon. Physica Status Solidi (b), 136, 373-385.

[11]   Mohammadi, A.R., Bennington, C.P.J. and Chiao, M. (2011) Development of a Combined Piezoresistive Pressure and Temperature Sensor Using a Chemical Protective Coating for Kraft Pulp Digester Process Monitoring. Journal of Micromechanics and Microengineering, 21, Article ID: 015009.