Calculating the Phase Transformation Kinetics Using Impedance Spectroscopy for Sb2Te3

Carlos  Rivera-Rodríguez; Juan Aspiazu  Fabián; Raúl Díaz  Godoy

doi:10.4236/jsemat.2014.42015

Carlos Rivera-Rodríguez^*, Juan Aspiazu Fabián, Raúl Díaz Godoy

Abstract: This paper describes a simple form, the theory to determine the crystallization fraction during the phase transformation of a solid, at a constant heating rate, from data obtained by impedance spectroscopy, where the change of the applied alternating voltage and measured current are proportional to the microstructural changes at the sample, corresponding to the volume fraction of a series layer model of two phases. To determine the volume fraction of each phase present in the sample, electrical data are obtained: conductivity and permittivity at DC, which are modeled by an electrical circuit composed by 2-RC, taking into that the permittivity and the occupied volume correspond to the filling fraction of each phase. By Cathodic Ersion or Sputtering, samples were obtained in film form of about 500 in thickness, composed of an alloy of Sb2Te3, in amorphous phase. To ensure the existence of the phase transformation in the sample, phase transition tests are performed by changes in: Reflection Optics, Electrical Resistivity and X-Ray Diffraction, showing clearly the presence of such a transformation. In the final part of this work, it completely shows the experimental results, giving a clear and precise idea of the kinetics of phase transformation of Sb2Te3 alloy, by impedance spectroscopy technique, which proves to be a simple and practical calculation tool.

Keywords: Phase Transformation, Sb2Te3, Impedance Spectroscopy

Cite this paper: Rivera-Rodríguez, C. , Fabián, J. and Godoy, R. (2014) Calculating the Phase Transformation Kinetics Using Impedance Spectroscopy for Sb2Te3. Journal of Surface Engineered Materials and Advanced Technology, 4, 111-121. doi: 10.4236/jsemat.2014.42015.

References

[1] Kolmogotov, A.A.N. (1937) A Statistical Theory for the Recrystallisation of Metals. Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy (Inorganic Materials (USSR)), 1, 355.

[2] Johnson, W.A. and Mehl, K.E. (1939) Reaction Kinetics in Processes of Nucleation and Growth. Transactions of the American Institute of Mining, Metallurgical and Petroleum Engineers, 195, 416.

[3] Avrami, M. (1939) Kinetics of Phase Change. Journal of Chemical Physics, 7, 1103.
http://dx.doi.org/10.1063/1.1750380

[4] Yerofeev, B.V. (1946) Doklady Akademii Nauk SSSR, 52, 511.

[5] Chistian, J.W. (1975) The Theory of Transformations in Metals and Alloys. 2nd Edition, Pergamon Press, Oxford.

[6] Feinleib, J., deNeufville, J., Moss, S.C. and Ovshinsky, S.R. (1971) Rapid Reversible Light-Induced Crystallization of Amorphous Semiconductors. Applied Physics Letters, 18, 254-257.
http://dx.doi.org/10.1063/1.1653653

[7] Ozawa, T. (1971) Kinetics of Non-Isothermal Crystallization. Polymer, 12, 150-158.
http://dx.doi.org/10.1016/0032-3861(71)90041-3

[8] Borchardt, H.J. (1960) Initial Reaction Rates from DTA. Journal of Inorganic and Nuclear Chemistry, 12, 252.
http://dx.doi.org/10.1016/0022-1902(60)80369-7

[9] Piloyan, G.O., Rybachikov, I.D. and Novikov, O.S. (1966) Determination of Activation Energies of Chemical Reactions by Differential Thermal Analysis. Nature, 212, 1229.
http://dx.doi.org/10.1038/2121229a0

[10] Augis, J.A. and Bennett, J.E. (1978) Calculation of the Avrami Parameters for Heterogeneous Solid-State Reaction Using a Modification of the Kissinger Method. Journal of Thermal Analysis, 13, 283-292.
http://dx.doi.org/10.1007/BF01912301

[11] Ohshima, N. (1996) Crystallization of Germanium-Antimony-Tellurium Amorphous Thin Film Sandwiched between Various Dielectric Protective Films. Journal of Applied Physics, 79, 8357-8363. http://dx.doi.org/10.1063/1.362548

[12] Mott, N.F. and Davis, E.A. (1979) Electronic Process in Non-Crystalline Materials. 2nd Edition, Clarenton Press, Oxford.

[13] Ohring, M. (1992) The Materials Science of Thin Films. Academic Press Inc., San Diego.

[14] Sze, S.M. (1981) Physics of Semiconductor Devices. 2nd Edition, John Wiley and Sons, Hoboken.

[15] Ross Macdonald, J. (1987) Impedance Spectroscopy. John Wiley and Sons, Hoboken.

[16] Bruggeman, D.A.G. (1935) Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen Substanzen. Annalen der Physik, 416, 636-664.

[17] Garlnad, J.C. and Tanner, D.B. (1978) Electrical Transport and Optical Properties of Inhomogeneous Media. American Institute of Physics, New York.

[18] McLachlan, D.S., Hwang, J.H. and Mason, T.O. (2000) Evaluating Dielectric Impedance Spectra Using Effective Media Theories. Journal of Electroceramics, 5, 37-51.
http://dx.doi.org/10.1023/A:1009989427283