Recent studies using BSIM3
models have suggested that noise depends on the transconductance-to-drain
ratio gm/ID of a
transistor. However, to the best of our knowledge, no experimental result
demonstrating gm/ID dependent noise
previously observed in simulation is available in the literature. This paper
examines the underlying principles that make it possible to analyze noise using gm/ID based noise
analysis. Qualitative discussion of normalized noise is presented along with
experimental results from a 130 nm CMOS process. A close examination of the
experimental results reveals that the device noise is width independent from 1
Hz to 10 kHz. Moreover, noise increases as gm/ID is reduced. The
experiment observation that noise is width independent makes it possible for
circuit designers to generate normalized parameters that are used to study
noise intuitively and accurately.
Cite this paper
Ou, J. , Ferreira, P. and Lee, J. (2014) Experimental Demonstration of gm
Based Noise Analysis. Circuits and Systems
, 69-75. doi: 10.4236/cs.2014.54009
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