OJAppS  Vol.4 No.3 , March 2014
Analytical Evaluation of Energy and Electron Concentrations in Quantum Wells of the High Electron Mobility Transistors
Abstract: In this letter we propose analytical evaluation method for the electron density and the energy density in multi-layered high electron mobility transistors (HEMTs). The algorithm is used to simulate the variation of the electron density and the energy density against temperature of hetero-junction AlGaN/GaN. The proposed procedure guaranties the reliable application of the contribution of multi-layered HEMTs structure. In conclusion, the obtained results are estimated and discussed.
Cite this paper: Saygi, S. (2014) Analytical Evaluation of Energy and Electron Concentrations in Quantum Wells of the High Electron Mobility Transistors. Open Journal of Applied Sciences, 4, 137-141. doi: 10.4236/ojapps.2014.43014.

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