JMP  Vol.5 No.1 , January 2014
Long-Time Relaxation and Residual Conductivity in GaP Irradiated by High-Energy Electrons
ABSTRACT

This paper presents the results of a study of long-time relaxation (LR) and residual conductivity in n-type gallium phosphide (GaP) crystals irradiated by 50 MeV electrons. A manifold increase in photosensitivity and quenching of residual conductivity was found as a result of irradiation. It is shown that LR in GaP is due to disordered regions (generated by electron irradiation) which have conductivity close to self one. The Fermi level in the disordered regions is determined by which is located deep in the forbidden band (Ее - 1.0 eV). LR effect is mainly explained by a spatial separation of electrons and holes, recombination of which is prevented by potential barriers. The observed increase in conductivity is associated with the increase in the concentration of minority carriers as well as with increase of the Hall mobility at the sample illumination.


Cite this paper
H. Yeritsyan, N. Grigoryan, V. Harutyunyan, E. Hakhverdyan and V. Baghdasaryan, "Long-Time Relaxation and Residual Conductivity in GaP Irradiated by High-Energy Electrons," Journal of Modern Physics, Vol. 5 No. 1, 2014, pp. 51-54. doi: 10.4236/jmp.2014.51008.
References
[1]   M. K. Sheinkman and A. Ja. Schick, Physics and Technique of Semiconductors, No. 10, 1976, pp. 209-233. (in Russian)

[2]   E. Yu. Brailovskii, N. E. Grigoryan and G. N. Eritsyan, Physica Status Solidi (A), Vol. 62, 1980, pp. 649-655.
http://dx.doi.org/10.1002/pssa.2210620237

[3]   G. E. Zardas, et al., Solid State Communications, Vol. 105, 1998, pp. 77-79.
http://dx.doi.org/10.1016/S0038-1098(97)10065-5

[4]   V. S. Vavilov, et al., Uspekhi Phyizicheskikh Nauk, Vol. 169, 1999, pp. 209-212. (in Russian)

[5]   G. Zardas, Ph. Yannakopoulos, C. Symeonides, O. Csabay and P. Euthymiou, Materials Science, Vol. 23, 2005, pp. 985-988.

[6]   G. Zardas, Ph. Yannakopoulos, M. Ziska, C. Symeonides, P. Euthymiou and O. Csabay, Microelectronics Journal, Vol. 36, 2005, pp. 1-4.

[7]   A. H. Kalma and J. C. Correlli, Physical Review, Vol. 173, 1968, pp. 734-745.
http://dx.doi.org/10.1103/PhysRev.173.734

[8]   R. F. Konopleva and V. N. Ostroumov, “The Interaction of High Energy Charged Particles with Germanium and Silicon,” Atomizdat, Moscow, 1975. (in Russian)

[9]   M. K. Bachadyrchanov, S. B. Isamov, N. F. Zikrillaev and E. U. Arzikulov, Surface Engineering and Applied Electrochemistry, Vol. 49, 2013, pp. 308-311.

[10]   S. M. Spitzer and I. C. North, Journal of Applied Physics, Vol. 44, 1973, pp. 214-219.
http://dx.doi.org/10.1063/1.1661864

[11]   E. Ju. Brailovskii, et al., Physics and Technique of Semiconductors, Vol. 9, 1975, pp. 769-771. (in Russian)

 
 
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