CS  Vol.5 No.1 , January 2014
Mixed-Mode Device Modeling of DGMOS RF Oscillators
ABSTRACT

A Colpitts oscillator, working around a 3 GHz frequency, contains a double gate Metal Oxide Semiconductor transistor (DGMOS). A mixed-mode analysis is involved, applying a quantum model to the device, whereas the rest of the considered circuit is governed by Kirchhoff’s laws. The Linear Time Variant (LTV) model of phase noise is based on the Impulse Sensitivity Function of the Colpitts Oscillator which describes carefully the sensitivity of an oscillator to any impulse current injection in any node of the circuit. Finally, we improve the phase noise modeling, confronting some analytical developments to mixed-mode simulations.


Cite this paper
M. Bella, S. Latreche, S. Labiod and C. Gontrand, "Mixed-Mode Device Modeling of DGMOS RF Oscillators," Circuits and Systems, Vol. 5 No. 1, 2014, pp. 18-26. doi: 10.4236/cs.2014.51004.
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