of etched profile in microelectronic devices during plasma etching process is
one of the most important tasks of front-end and back-end microelectronic
devices manufacturing technologies. A comprehensive simulation of etching
profile evolution requires knowledge of the etching rates at all the points of
the profile surface during the etching process. Electrons do not contribute
directly to the material removal, but they are the source, together with
positive ions, of the profile charging that has many negative consequences on
the final outcome of the process especially in the case of insulating material
etching. The ability to simulate feature charging was added to the 3D level set
profile evolution simulator described earlier. The ion and electron fluxes were
computed along the feature using
 J. Sethian, “Level Set Methods and Fast arching Methods: Evolving Interfaces in Computational Geometry, Fluid Mechanics, Computer Vision and Materials Sciences,” Cambridge University Press, Cambridge, 1998.
 K. Hashimoto, “Charge Damage Caused by Electron Shading Effect,” Japanese Journal of Applied Physics, Vol. 33, 1994, pp. 6013-6018.
 M. Radmilovic-Radjenovic, B. Radjenovic and M. Savic, “The Surface Charging Effects in Three-Dimensional Simulation of the Profiles of Plasma-Etched Nanostructures,” International Journal of Numerical Modelling, Vol. 24, No. 6, 2011, pp. 535-544.
 B. Radjenovic, J. K. Lee and M. Radmilovic-Radjenovic, “Sparse Field Level Set Method for Non-Convex Hamiltonians in 3D Plasma Etching Profile Simulations,” Computer Physics Communications, Vol. 174, No. 2, 2006, pp. 127-132. http://dx.doi.org/10.1016/j.cpc.2005.09.010
 G. Hwang and K. Giapis, “On the Origin of the Notching Effect during Etching in Uniform High Density Plasmas,” Journal of Vacuum Science and Technology, Vol. B15, 1997, pp. 70-87.
 A. Mahorowala and H. Sawin, “Etching of Polysilicon in Inductively Coupled Cl2 and HBr Discharges. IV. Calculation of Feature Charging in Profile Evolution,” Journal of Vacuum Science and Technology, Vol. B20, 2002, pp. 1084-1095. http://dx.doi.org/10.1116/1.1481869
 B. M. Radjenovic, M. D. Radmilovic-Radjenovic and Z. L. Petrovic, “Dynamics of the Profile Charging During SiO2 Etching in Plasma for High Aspect Ratio Trenches,” IEEE Transactions on Plasma Science, Vol. 36, No. 4, 2008, pp. 874-875.
 B. Radjenovic, M. Radmilovic-Radjenovic and P. Belicev, “Three-Dimensional Simulations with Fields and Particles in Software and Inflector Designs,” Journal of Software Engineering and Applications, Vol. 6, 2013, pp. 390-395. http://dx.doi.org/10.4236/jsea.2013.68048
 C. K. Birdsall, “Particle-In-Cell Charged-Particle Simulations, Plus Monte Carlo Collisions with Neutral Atoms, PIC-MCC,” IEEE Transactions on Plasma Science, Vol. 19, No. 2, 1991, pp. 65-85.
 J. P. Verboncoeur, “Particle Simulation of Plasmas: Review and Advances,” Plasma Physics and Controlled Fusion, Vol. 47, 2005, pp. A231-A260.
 H. C. Kim, F. Iza, S. S. Yang, M. Radmlovic-Radjenovic and J. K. Lee, “Particle and Fluid Simulations of Low-Temperature Plasma Discharges: Benchmarks and Kinetic Effects,” Journal of Physics D: Applied Physics, Vol. 38, 2005, pp. R283-R301.
 GetDP, http://www.geuz.org/getdp
 TetGen, http://tetgen.berlios.de