ENG  Vol.3 No.3 , March 2011
Study of Ni/Al Interface Diffusion by Molecular Dynamics Simulation
ABSTRACT
Molecular dynamics simulation of Ni/Al interface diffusion is carried out by Embedded Atom Method (EAM) potential. The problem how the temperature affects Ni/Al interface diffusion is discussed. The initial dynamic behavior of Ni/Al interface diffusion at high temperature is shown. The study in this letter is helpful to understand the origin of diffusion phenomenon.

Cite this paper
nullC. Zhang, H. Wang and Y. Qiu, "Study of Ni/Al Interface Diffusion by Molecular Dynamics Simulation," Engineering, Vol. 3 No. 3, 2011, pp. 227-232. doi: 10.4236/eng.2011.33026.
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