K. Y. Xu^*, Y. N. Wang, Z. N. Wang, J. W. Xiong, G. Wang

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Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, China; 2State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, China..
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Abstract: Gunn oscillations in a GaN based planar nano-device have been studied by ensemble Monte Carlo (EMC) method. Simulation results show that when the channel length of the device reduces to 450 nm, THz oscillations (about 0.3 THz) can be obtained. Also the phase of the oscillations can be controlled by the initial conditions that excite the Gunn domains. Moreover, through adjusting the phase difference between the oscillations in a double-channels device, which attained by parallel connecting two single-channel devices, the frequency of the device shifts from 0.3 THz to 0.6 THz. This phenomenon remains in devices with shorter channel-length, unless the channel-length is too short to support Gunn oscillations. The possible underlying mechanisms are also discussed.

Keywords: THz Oscillation; Gunn; Monte Carlo; GaN; Planar Nanodevice

Cite this paper: Xu, K. , Wang, Y. , Wang, Z. , Xiong, J. and Wang, G. (2013) THz Oscillations in a GaN Based Planar Nano-Device. Journal of Computer and Communications, 1, 50-53. doi: 10.4236/jcc.2013.17012.

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