Simulation and Design of a Submicron Ultrafast Plasmonic Switch Based on Nonlinear Doped Silicon MIM Waveguide

Ahmad Naseri  Taheri; Hassan  Kaatuzian

doi:10.4236/jcc.2013.17006

Ahmad Naseri Taheri^*, Hassan Kaatuzian

Abstract: We propose and analyze a submicron stub-assisted ultrafast all-optical plasmonic switch based on nonlinear MIM waveguide. It is constructed by two silicon stub filters sandwiched by silver cladding. The signal wavelength is assumed to be 1550 nm. The simulation results show a ?14.66 dB extinction ratio. Downscaling the silicon waveguide in MIM structure leads to enhancement of the effective Kerr nonlinearity due to tight mode confinement. Also, using O+ ions implanted into silicon, the switching time less than 10 ps and a delay time less than 8 fs are achieved. The overall length of the switch is 550 nm.

Keywords: Plasmonics; Silicon Based All-Optical Switch; Stub Filter; Metal-Insulator-Metal Waveguide; Nonlinear Kerr Effect

Cite this paper: Taheri, A. and Kaatuzian, H. (2013) Simulation and Design of a Submicron Ultrafast Plasmonic Switch Based on Nonlinear Doped Silicon MIM Waveguide. Journal of Computer and Communications, 1, 23-26. doi: 10.4236/jcc.2013.17006.

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