The Temperature Dependence of the Density of States in Semiconductors

Show more

References

[1] B. Ridley, “Quantum Processes in Semiconductors,” Clarendon Press, Oxford, 1982.

[2] R. Passler, “Semi-Empirical Descriptions of Temperature Dependences of Band Gaps in Semiconductors,” Physica Status Solidi (b), Vol. 236, No. 3, 2003, pp. 710-728.

http://dx.doi.org/10.1002/pssb.200301752

[3] G. Gulyamov and N. Yu. Sharibaev, “Determination of the Density of Surface States at the Semiconductor-Insulator Interface in a Metal-Insulator-Semiconductor Structure,” FTP (Fizika Technika Poluprovodnikov), Vol. 45, No. 2, 2011, pp. 178-182.

[4] G. Gulyamov and N. Yu. Sharibaev, “Determination of the Discrete Spectrum of Surface State Density in MOSStructures Al-SiO2-Si Irradiated by Neutrons,” Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 9, 2012, pp. 13-17.

[5] G. Gulyamov, N. Yu. Sharibaev and U. I. Erkaboev, “Thermal Broadening Density of States and Temperature Dependence of the Band Gap Ge,” FIP (Fyzicheckaya Injeneriya Poverkhnosti), Vol. 10, No. 4, 2012, pp. 366-370.

[6] G. Gulyamov and N. Yu. Sharibaev, “Temperature Dependence of the Band Gap of Si and Due to the Thermal Broadening of the Density of States of,” FIP (Fyzicheckaya Injeneriya Poverkhnosti), Vol. 10, No. 2, 2012, pp. 4-8.

[7] G. Gulyamov, I. N. Karimov, N. Yu. Sharibaev and U. I. Erkaboev, “Determination of the Density of Surface States at the Semiconductor-Insulator Structures in Al-SiO2-Si and Al-SiO2-n-Si

[8] G. Gulyamov, N. Yu. Sharibaev and U. I. Erkaboev, “Influence Effective Mass Density of States at Temperature Dependence of Band Gap in Solid Solutions p-Bi2-xSbxTe3-ySey,” FIP (Fyzicheckaya Injeneriya Poverkhnosti), Vol. 11, No. 2, 2013, pp. 195-198.

[9] L. N. Lukyanova, V. Kutasov and P. Konstantinov, “Effective Mass and Mobility in Solid p-Bi2-xSbxTe3-ySey for Temperatures <300K,” Solid State, Vol. 47, No. 2, 2005, pp. 224-228.

[10] N. Mott and E. Devis, “Electronic Processes in Non-Crystalline Materials,” 2nd Edition, Clarendon Press, Oxford, 1982.

[11] V. B. Bonch-Bruyevich, et al., “Electronic Theory of NonCrystalline Semiconductors,” Nauka, Moscow, 1981.

[12] A. I. Anselm, “Introduction to Semiconductor,” Nauka, Moscow, 1978.

[13] K. V. Shalimova, “Physics of Semiconductors,” Energoatomizdat, Moscow, 1985.

[14] A. M. R. Godenir, “Novel Dilute Nitride Semiconductor Materials for Mid-Infrared Applications,” University of Lancaster, 2008.

[15] A. Caiafa, X. Wang, J. L. Hudgins, E. Santi and P. R. Palmer, “Cryogenic Study and Modeling of IGBTS,” IEEE 34th Annual Power Electronics Specialist Conference, 15-19 June 2003, pp. 1897-1903.