Back
 WJCMP  Vol.1 No.1 , February 2011
Interaction of RuO2 and Lead-Silicate Glass in Thick-Film Resistors
Abstract: Results of investigation of X-ray diffraction, infrared and optical spectra of powders of the ruthenium dioxide, lead-silicate glass as well as their mixture before and after sintering are reported. Sintering conditions typical for thick film resistors were used. Intensity of main lines of RuO2 in X-ray diffraction patterns of sintered mixtures decreases and they slightly shift towards small angles. No new reflexes appear in these patterns. Absorbance of RuO2 in the range of 2.5-100 μm is proportional to and featureless. Infrared spectrum of lead-silicate glass has absorption bands of [SiO4]4- tetrahedra and Pb-O bonds only. Optical spectrum of RuO2 has wide absorption bands at 950 and 370 nm. Spectra of the mixture of RuO2 and glass powders before and after sintering are different indicating that there is interaction between them during the sintering process. Concentration of free charge carriers estimated from the optical spectra is about 1021 cm-3.
Cite this paper: nullG. Abdurakhmanov, G. Vakhidova and L. Tursunov, "Interaction of RuO2 and Lead-Silicate Glass in Thick-Film Resistors," World Journal of Condensed Matter Physics, Vol. 1 No. 1, 2011, pp. 1-5. doi: 10.4236/wjcmp.2011.11001.
References

[1]   Pike G. E. and Seager C. H. Electrical properties and conduction mechanisms of Ru-based thick-film (cermet) resistors // J. Appl. Phys. 48(12) (1977) 5152.

[2]   Smith D. P. H. and Anderson J. C. Electron conduction in thick film resistors // Thin Solid Films 71 (1980) 79.

[3]   Cattaneo A. and Prudenziati M., Effects of refiring processes on electrical and structural properties of thick-film resis-tors // Electrocomp. Sci. and Technol. 6 (1980) 165.

[4]   Morten B., Masoero A., Prudenziati M. and Manfredini T. Evolution of ruthen-ate-based thick film cermet resistors //J. Phys. D: Appl. Phys. 27 (1994) 2227.

[5]   Johnson F., Crosbie G. M. and Donlon W. T. The effect of processing conditions on the resistivity and microstructure of ruthenate-based thick film resistors // J. Materials Science: Mat. In Electronics 8 (1997) 29.

[6]   Meneghini C., Mobilio S., Pivetti F., Selmi I., Prudenziati M. and Morten B. RuO2-based thick film resistors studied by extended x-ray absorption spectros-copy // J. Appl. Phys. 86 (1999) 3590.

[7]   Gabáni S., Flachbart K., Pavlík V., Pietriková A. and Gabániová M. Micro-structural Analysis and Transport Properties of RuO2-Based Thick Film Resistors // Acta Physica Polonica A 113 (2008) No. 1, 625.

[8]   Abe A. and Taketa Y. Electrical conduction in thick film resistors // J. Appl. Phys. 24 (1991) 1163.

[9]   Koo B. K., No K. S. and Kim H. G. AC complex impedance investigation for RuO2-glass composites // IEEE Trans. CHMT-14, #3 (1991) 580.

[10]   Zheng Y., Atkinson J. and Sion R. An explanation of thermal behaviour of thick film strain gauges // J. Phys. D: Appl. Phys. 36 (2003) 1153.

[11]   Abdurakhmanov G., Vakhidova G. S. Diffusion and electrical conduction in thick film resistors // Technical Physics. The Russian Journal of Applied Physics 65 (1995), #7, 178.

[12]   Born M., Volf E. Principles of optics, Cambridge, Cambridge University Press, 2005. – 986 pp.

[13]   Infrakrasnie spektri neorganicheskix stekol I kristallov (Infrared spectra of inorganic glasses and crystals) (in Russian) / Vlasov A. G., Florinskaya V. A. et al. - Leningrad, Ximiya Publishing House, 1972. – 304 pp.

[14]   Lazarev A. N. Kolebatelnie spektri I stroenie silikatov (Vibrational spectra and structure of silicates) (in Russian). Leningrad, Nauka Publishing House, 1968.- 348 pp.

[15]   Ginzburg V. L. The propagation of electromagnetic waves in plasmas. Transl. from russian. Oxford, New York, Pergamon Press, 1970. - 615 p.

[16]   Sidorov T. A. Infrakrasnie I ultrafioletovie spektri I structura svintsovo-silikatnix stekol (Infrared and ultravio-let spectra and structure of lead-silicate glasses) (in Russian) // J. Prikladnoy Spektroskopii (J. Appl. Spectroscopy) 6 (1967) 98.

 
 
Top