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 MNSMS  Vol.3 No.4 B , October 2013
Atomistic Simulation of Undissociated 60° ; Basal Dislocation in Wurtzite GaN.
Abstract: We have carried out computer atomistic simulations, based on an efficient density functional based tight binding method, to investigate the core configurations of the 60°basal dislocation in GaN wurtzite. Our energetic calculations, on the undissociated dislocation, demonstrate that the glide configuration with N polarity is the most energetically favorable over both the glide and the shuffle sets.
Cite this paper: I. Belabbas, J. Chen, P. Komninou and G. Nouet, "Atomistic Simulation of Undissociated 60&deg ; Basal Dislocation in Wurtzite GaN.," Modeling and Numerical Simulation of Material Science, Vol. 3 No. 4, 2013, pp. 11-16. doi: 10.4236/mnsms.2013.34B003.
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