Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch

Abstract

In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.

In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.

Keywords

Capacitive Model, Double-Gate MOSFET, DP4T Switch, Isolation, Radio Frequency, RF Switch, S-Parameter and VLSI

Capacitive Model, Double-Gate MOSFET, DP4T Switch, Isolation, Radio Frequency, RF Switch, S-Parameter and VLSI

Cite this paper

nullV. Srivastava, K. Yadav and G. Singh, "Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch,"*Wireless Engineering and Technology*, Vol. 2 No. 1, 2011, pp. 15-22. doi: 10.4236/wet.2011.21003.

nullV. Srivastava, K. Yadav and G. Singh, "Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch,"

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