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 WJCMP  Vol.3 No.4 , November 2013
Influence of Iodine Pressure on the Growth of CuIn1-xGaxSe2 Thin Films Obtained by Close-Spaced Vapor Transport “CSVT”
Abstract: We present the results concerning photovoltaic materials CuIn1-xGaxSe2 thin films, which were obtained by close-spaced vapor transport “CSVT”. The influence of the iodine pressure on the growth of CuIn1-xGaxSe2 thin films was studied. The thin films were characterized by Energy Dispersive Spectrometry (EDS), Scanning Electron Microscope (SEM), hot point probe method, X-Ray Diffraction (XRD), Photoluminescence, and Optical response (Photoconductivity). At high pressure, the deposition rate was very important. The films were relatively thick and homogeneous with large grains dimensions. These films are formed of crystals placed in a preferential orientation depending on the plan (112). At low pressure, the films were thin and inhomogeneous with relatively small grains. These films of crystals didn’t have preferential orientation.
Cite this paper: Habib, D. , Asmar, R. , Helou, Z. and Moussa, G. (2013) Influence of Iodine Pressure on the Growth of CuIn1-xGaxSe2 Thin Films Obtained by Close-Spaced Vapor Transport “CSVT”. World Journal of Condensed Matter Physics, 3, 164-168. doi: 10.4236/wjcmp.2013.34026.
References

[1]   I. Repins, M. A. Contreras, B. Egaas, C. DeHart, J. Scharf, C. L. Perkins, B. To and R. Noufi, “New World Record Efficiency for Cu(In,Ga)Se2. Thin-Film Solar Cells beyond 20%,” Progress in Photovoltaics: Research and Applications, Vol. 16, No. 3, 2008, pp. 235-239.
http://dx.doi.org/10.1002/pip.822

[2]   H. Sakata and N. Nakao, “Optical and Electrical Properties of Flash-Evaporated Amorphous CuInSe2 Films,” Solar Energy Materials and Solar Cells, Vol. 63, No. 3, 2000, pp. 259-265.
http://dx.doi.org/10.1016/S0927-0248(00)00032-5

[3]   G. Orsal, N. Romain, M. C. Artaud and S. Duchemin, “Characterization of CuGaSe2 Thin Films Grown by MOCV,” IEEE Transaction on Electron Device, Vol. 46, No. 10, 1999, pp. 2098-2102.
http://dx.doi.org/10.1109/16.792003

[4]   S. Nakamura, S. Sugawara, A. Hashimoto and A. Yamamoto, “Influence of Annealing Temperature on the Properties of Cu(In,Ga)Se2. Thin Films by Thermal Crystallization in Se Vapor,” Solar Energy Materials & Solar Cells, Vol. 50, No. 1-4, 1998, pp. 25-30.
http://dx.doi.org/10.1016/S0927-0248(97)00097-4

[5]   I. Martil, J. Santamaria, G. Gonzalez Diaz and F. Sanchez Quesada, “Structural, Electrical, and Optical Properties of CuGaSe2 rf Sputtered Thin Films,” Journal of Applied Physics, Vol. 68, No. 1, 1990, pp. 189-193.
http://dx.doi.org/10.1063/1.347113

[6]   S. H. Kwon, B. T. Ahn, S. K. Kim, K. H. Yoon and J. Song, “Growth of CuIn3Se5 Layer on CuInSe2 Films and Its Effect on the Photovoltaic Properties of In2Se3/ CuInSe2 Solar Cells,” Thin Solid Films, Vol. 323, No. 1-2, 1998, pp. 265-269.
http://dx.doi.org/10.1016/S0040-6090(97)00928-0

[7]   K. T. Ramakrishna Reddy and R. B. V. Chalapathy, “Preparation and Properties of Sprayed CuGa0.5In0.5Se2 Thin Films,” Solar Energy Materials & Solar Cells, Vol. 50, No. 1-4, 1998, pp. 19-24.
http://dx.doi.org/10.1016/S0927-0248(97)00096-2

[8]   J. H. Schon, V. Alberts and E. Burcher, “Sharp Optical Emissions from Cu-Rich, Polycrystalline CuInSe2 Thin Films,” Journal of Applied Physics, Vol. 81, No. 6, 1997, pp. 2799-2802. http://dx.doi.org/10.1063/1.364306

[9]   S. S. Kulkarni, G. T. Koishiyev, H. Moutinho and N. G. Dhere, “Preparation and Characterization of
CuIn1-xGaxSe2-ySy Thin Film Solar Cells by Rapid Thermal Processing,” Thin Solid Films, Vol. 517, No. 7, 2009, pp. 2121-2124.
http://dx.doi.org/10.1016/j.tsf.2008.10.128

[10]   G. W. El Haj Moussaa, Ariswan, A. Khoury, F. Guastavino and C. Llinarés, “Fabrication and Study of Photovoltaic Material CuInxGa1-xSe2 Bulk and Thin Films Obtained by the Technique of Close-Spaced Vapor Transport,” Solid State Communications, Vol. 122, No. 3-4, 2002, pp. 391-396.
http://dx.doi.org/10.1016/S0038-1098(02)00100-X

[11]   A. Zouaoui, M. Lachab, M. L. Hidalgo, A. Chaffa, C. Llinares and N. Kesri, “Structural, Compositional and Photoluminescence Characteristics of CuInSe2 Thin Films Prepared by Close-Spaced Vapor Transport,” Thin Solid Films, Vol. 339, No. 1-2, 1999, pp. 10-80.
http://dx.doi.org/10.1016/S0040-6090(98)00893-1

[12]   G. W. El Haj Moussa, M. Ajaka, M. El Tahchi, E. Eid and C. Llinares, “Ellipsometric Spectroscopy on Polycrystalline CuIn1–xGaxSe2: Identification of Optical Transitions,” Physica Status Solidi (a), Vol. 202, No. 3, 2005, pp. 469-475. http://dx.doi.org/10.1002/pssa.200406934

[13]   F. Guastavino, K. Zeaiter, L. Djellal, M. Abdelali and C. Llinares, “Photoluminescence Study of Cu(GaxIn1-x)3Se5 and CuIn3(SxSe1-x)5 Crystals with 0 ≤ x ≤ 1,” Solid State Phenomena, Vol. 67-68, 1999, pp. 427-432.
http://dx.doi.org/10.4028/www.scientific.net/SSP.67-68.427

[14]   Ariswan, G. El Haj Moussa, M. Abdelali, F. Guastavino and C. Llinares, “Structural, Optical and Electrical Properties of the Ordered Vacancy Compound CuIn3Se5 Thin Films Fabricated by Flash Evaporation,” Solid State Communications, Vol. 124, No. 10-11, 2002, pp. 391-396.
http://dx.doi.org/10.1016/S0038-1098(02)00603-8

[15]   H. Zachmann, S. Heinker, A. Braun, A. V. Mudryi, V. F. Gremenok, A. V. Ivaniukovich and M. V. Yakushev, “Characterisation of Cu(In,Ga)Se2-Based Thin Film Solar Cells on Polyimide,” Thin Solid Films, Vol. 517, No. 7, 2009, pp. 2209-2212.
http://dx.doi.org/10.1016/j.tsf.2008.10.132

[16]   J. H. Schon, V. Alberts and E. Bucher, “Structural and Optical Characterization of Polycrystalline CuInSe2,” Thin Solid Films, Vol. 301, No. 1-2, 1997, pp. 115-121.
http://dx.doi.org/10.1016/S0040-6090(97)00060-6

[17]   H. Miyake, T. Haginoya and K. Sugiyema, “THM Growth and Characterization of CuGaxIn1-xSe2 Solid Solutions,” Solar Energy Materiels and Solar Cells, Vol. 50, No. 1-4, 1998, pp. 51-56.
http://dx.doi.org/10.1016/S0927-0248(97)00117-7

 
 
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