JSEMAT  Vol.3 No.3 A , September 2013
ATR-FTIR and XPS Evaluation of Alkyl Immobilization by Hydrosilylation on n-Si(111) for Photoelectrochemical Cell Electrode
Author(s) Toshihito Ohtake*
ABSTRACT

An electrode development was needed with high efficiency and low costs as next generation solar cells. We attempted the electrode fabrication for a photoelectrochemical cell by immobilizing functional groups on a n-Si(111) surface. The immobilization was applied by hydrosilylation terminated with ester (hydrophobic) or carbonyl (hydrophilic) group. Results confirmed the immobilization on the Si surface by measuring ATR-FTIR and XPS.


Cite this paper
T. Ohtake, "ATR-FTIR and XPS Evaluation of Alkyl Immobilization by Hydrosilylation on n-Si(111) for Photoelectrochemical Cell Electrode," Journal of Surface Engineered Materials and Advanced Technology, Vol. 3 No. 3, 2013, pp. 7-10. doi: 10.4236/jsemat.2013.33A002.
References
[1]   K. L. Chopra, P. D. Paulson and V. Dutta, “Thin-Film Solar Cells: An Overview,” Progress in Photovoltaics, Vol. 12, No. 2-3, 2004, pp. 69-92. doi:10.1002/pip.541

[2]   A. Goetzberger, C. Hebling and H. W. Schock, “Photovoltaic Materials, History, Status and Outlook,” Materials Science and Engineering: Reports, Vol. 40, No. 1, 2003, pp. 1-46. doi:10.1016/S0927-796X(02)00092-X

[3]   Y. Nakato, K. Ueda, H. Yano and H. Tsubomura, “Effect of Microscopic Discontinuity of Metal Overlayers on the Photovoltages in Metal-Coated Semiconductor-Liquid Junction Photoelectrochemical Cells for Efficient Solar Energy Conversion,” The Journal of Physical Chemistry, Vol. 92, No. 8, 1988, pp. 2316-2324. doi:10.1021/j100319a043

[4]   M. R. Linford and C. E. D. Chidsey, “Alkyl Monolayers Covalently Bonded to Silicon Surfaces,” Journal of the American Chemical Society, Vol. 115, No. 26, 1993, pp. 12631-12632. doi:10.1021/ja00079a071

[5]   M. R. Inford, P. Fenter, P. M. Eisenberger and C. E. D. Chidsey, “Alkyl Monolayers on Silicon Prepared from 1-Alkenes and Hydrogen-Terminated Silicon,” Journal of the American Chemical Society, Vol. 117, No. 11, 1995, pp. 3145-3155. doi:10.1021/ja00116a019

[6]   A. Bansal, X. L. Li, I. Lauermann, N. S. Lewis, S. I. Yi and W. H. Weinberg, “Alkylation of Si Surfaces Using a Two-Step Halogenation/Grignard Route,” Journal of the American Chemical Society, Vol. 118, No. 30, 1996, pp. 7225-7226. doi:10.1021/ja960348n

[7]   J. M. Buriak, “Organometallic Chemistry on Silicon Surfaces: Formation of Functional Monolayers Bound through Si-C Bonds,” Chemical Communications, Vol. 1999, No. 12, 1999, pp. 1051-1060. doi:10.1039/a900108e

[8]   J. M. Buriak, “Organometallic Chemistry on Silicon and Germanium Surfaces,” Chemical Reviews, Vol. 102, No. 5, 2002, pp. 1271-1308. doi:10.1021/cr000064s

[9]   D. D. M. Wayner and R. A. Wolkow, “Organic Modification of Hydrogen Terminated Silicon Surfaces,” Journal of the Chemical Society, Perkin Transactions, Vol. 2, No. 1, 2002, pp. 23-24.

[10]   T. Strother, W. Cai, X. S. Zhao, R. J. Hamers and L. M. Smith, “Synthesis and Characterization of DNA-Modified Silicon(111) Surfaces,” Journal of the American Chemical Society, Vol. 122, No. 6, 2000, pp. 1205-1209. doi:10.1021/ja9936161

[11]   A. Bansal and N. S. Lewis, “Stabilization of Si Photoanodes in Aqueous Electrolytes through Surface Alkylation,” The Journal of Physical Chemistry B, Vol. 102, No. 21, 1998, pp. 4058-4060. doi:10.1021/jp980679h

[12]   W. J. Royea, A. Juang and N. S. Lewis, “Preparation of Air-Stable, Low Recombination Velocity Si(111) Surfaces through Alkyl Termination,” Applied Physics Letters, Vol. 77, No. 13, 2000, pp. 1988-1990. doi:10.1063/1.1312203

[13]   T. Vallant, H. Brunner, J. Kattner, U. Mayer, H. Hoffmann, T. Leitner, G. Friedbacher, G. Schügerl, R. Svagera and M. Ebel, “Monolayer-Controlled Deposition of Silicon Oxide Films on Gold, Silicon, and Mica Substrates by Room-Temperature Adsorption and Oxidation of Alkylsiloxane Monolayers,” The Journal of Physical Chemistry B, Vol. 104, No. 22, 2000, pp. 5309-5317. doi:10.1021/jp000006a

[14]   J. B. Danner and J. M. Vohs, “Surface Reactions during the Growth of SiO2 Thin Films on Si(100) Using Tetraethoxysilane,” Langmuir, Vol. 10, No. 9, 1994, pp. 3116-3121. doi:10.1021/la00021a040

 
 
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