JST  Vol.3 No.3 , September 2013
An Integrated ISFET pH Microsensor on a CMOS Standard Process
Abstract: We present the design and integration of a nine-pH microsensor array on a single silicon substrate with its own signal readout circuit, integrated in a 0.6-μm commercial standard complementary metal oxide semiconductor (CMOS) process. An ion sensitive field effect transistor (ISFET) has been used as pH microsensor and an instrumentation amplifier as the read-out circuit. The ISFET structure is conformed by the channel length and ratio of MOS transistor, gate extended and the selective membrane, for which silicon nitride (Si3N4) is employed as an ion selective element. The complete design includes shielding around the pH microsensor and the readout circuit to avoid leakage of current to the substrate. The readout circuit is composed by three operational amplifiers and resistances that form the instrumentation amplifier, with a ±2.5 V bias has a 50 dB gain, power supply rejection ratio (PSSR) of 120 dB and common mode rejection ratio (CMRR) of 127 dB. The complete system is integrated in a 1.12 mm2 silicon area; it presents a 59 mV/pH linearity, within a concentration range of 2 to 12 of pH level, making it a good alternative for biological or medical applications.
Cite this paper: F. López-Huerta, R. Woo-Garcia, M. Lara-Castro, J. Estrada-López and A. Herrera-May, "An Integrated ISFET pH Microsensor on a CMOS Standard Process," Journal of Sensor Technology, Vol. 3 No. 3, 2013, pp. 57-62. doi: 10.4236/jst.2013.33010.

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