JMP  Vol.1 No.5 , November 2010
A Theoretical Study on Van Der Pauw Measurement Values of Inhomogeneous Compound Semiconductor Thin Films
ABSTRACT
The influence of intermixing heterogeneous regions that have different electrical properties from the base materials on van der Pauw measurement values was theoretically studied by computer simulation using the finite-element method. The measurement samples selected were thin films of inhomogeneous semiconductors. Calculated electrical properties, such as resistivity, carrier density, and mobility of the thin films, varied in predictable ways when heterogeneous regions were dispersed in wide ranges over the samples. On the other hand, the mobility of the thin films showed a different change when heterogeneous regions were locally concentrated in the measurement samples.

Cite this paper
nullT. Matsumura and Y. Sato, "A Theoretical Study on Van Der Pauw Measurement Values of Inhomogeneous Compound Semiconductor Thin Films," Journal of Modern Physics, Vol. 1 No. 5, 2010, pp. 340-347. doi: 10.4236/jmp.2010.15048.
References
[1]   L. J. van der Pauw, “A Method of Measuring Specific Resistivity and Hall Effect of Discs of Arbitrary Shape,” Philips Research Reports, Vol. 13, February 1958, pp. 1-9.

[2]   H. Komaki, T. Nakamura. R. Katayama, K. Onabe, M. Ozeki and T. Ikari, “Growth of In-Rich InGaN Films on Sapphire via GaN Layer By RF-MBE,” Journal of Crystal Growth, Vol. 301-302, April 2007, pp. 473-477.

[3]   T. Yamaguchi and Y. Nanishi, “Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy,” Applied Physics Express, Vol. 2, No. 5, April 2009, p. 051001.

[4]   B. N. Pantha, J. Li, J. Y. Lin and H. X. Jiang, “Evolution of Phase Separation in In-Rich InGaN Alloys,” Applied Physics Letters, Vol. 96, No. 23, June 2010, p. 232105.

[5]   A. Krtschil, A. Dadgar, N. Oleynik, J. Blasing, A. Diez and A. Krost, “Local P-Type Conductivity in Zinc Oxide Dual-Doped with Nitrogen and Arsenic,” Applied Physics Letters, Vol. 87, No. 26, December 2005, p. 262105.

[6]   D. W. Koon, “Effect of Contact Size and Placement, and of Resistive Inhomogeneities on van der Pauw Measurements,” Review of Scientific Instruments, Vol. 60, No. 2, February 1989, pp. 271-274.

[7]   D. W. Koon and C. J. Knickerbocker, “What do You Measure When You Measure the Hall Effect?” Review of Scientific Instruments, Vol. 64, No. 2, February 1993, pp. 510-513.

[8]   D. W. Koon and C. J. Knickerbocker, “Effects of Macroscopic Inhomogeneities on Resistive and Hall Measurements on Crosses, Cloverleafs, and Bars,” Review of Scientific Instruments, Vol. 67, No. 12, December 1996, pp. 4282-4285.

[9]   D. W. Koon, “Nonlinearity of Resistive Impurity Effects on van der Pauw Measurements,” Review of Scientific Instruments, Vol. 77, No. 9, September 2006, p. 094703.

[10]   O. Bierwagen, T. Ive, C. G. Van de Walle and J. S. Speck, “Causes of Incorrect Carrier-Type Identification in van der Pauw-Hall Measurements,” Applied Physics Letters, Vol. 93, No. 24, December 2008, p. 242108.

[11]   N. Yom-Tov, C. Saguy, A. Bolker, R. Kalish and Y. E. Yaish, “Accurate Carrier-Type Determination of Nonhomogeneously Doped Diamond,” Journal of Applied Physics, Vol. 108, No. 4, August 2010, p. 043711.

 
 
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