This study presents a silicon-based pressure sensor with temperature compensation. The eight piezoresistorswere designed on the polycrystalline silicon membrane and constructed by two concentric Wheatstone-bridge circuits to perform two sets of sensors. The sensor in the central circuit measures the membrane deflection caused by the combined effects of pressure and temperature, while the outer one measures only the deflection caused by the working temperature. From this arrangement, it is reliable and accuratetomeasure the pressure by comparing the output signals from the two concentric Wheatstone-bridge circuits. The optimal positions of the eight piezoresistorswere simulated by simulation software ANSYS. The investigated pressure sensor was fabricated by the micro electro-mechanical systems (MEMS) techniques. The measuring performance and an indication of the conventional single Wheatstone-bridge pressure sensor is easily affected under variation ofdifferent working temperature and causes a maximum absolute error up to 45.5%, while the double Wheatstone-bridge pressure sensor is able to compensate the error, and reduces it down to 1.13%. The results in this paper demonstrate an effective temperature compensation performance, and have a great performance and stability in the pressure measuring system as well.
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