Author(s) B. Bouazza, A. Guen-Bouazza^*, C. Sayah, N. E. Chabane-Sari

Affiliation(s)
Unite de Recherches Matériaux et Energies Renouvelables, Faculté des Sciences de l’Ingénieur, Université Abou-Bekr-Belka?d de Tlemcen, Tlemcen, Algérie.

ABSTRACT

An ensemble Monte Carlosimulation is used to compare high field electron transport in bulk GaAs, InAs and In_0.3Ga_0.7As. In particular, velocity overshoot and electron transit times are examined. We find the steady state velocity of the electrons is the most important factor determining transit time over distances longer then 0.2 μm. Over shorter distances velocity overshoot effects in InAs and In_0.3Ga_0.7 As at high fields are comparable to those in GaAs. We estimate the minimum transit time across a 1 μm InAs sample to be about 4.2 ps. Similar calculations for In_0.3Ga_0.7As yield 6 ps (for GaAs yield 10 ps). Calculations are made using a nonparabolic effective mass energy band model, Monte Carlo simulation that includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimized pseudopotential band calculations to ensure excellent agreement with experimental information and ab initio band models.

KEYWORDS
Monte Carlo Method; Semiconductor Devices; Velocity Overshoot; Electron Transport

Cite this paper
B. Bouazza, A. Guen-Bouazza, C. Sayah and N. Chabane-Sari, "Comparison of High Field Electron Transport in GaAs, InAs and In_0.3Ga_0.7As," Journal of Modern Physics, Vol. 4 No. 4, 2013, pp. 121-126. doi: 10.4236/jmp.2013.44A012.

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