Spin-wave structures whose current-voltage characteristics are controlled at room temperatures by magnetic field were produced with industrial technological methods using a spintronic europium-monoxide-based thin-film composite as an emitter and monocrystalline semiconductor n-GaAs as a collector. This shows that spin current transport actually exists and that a high-temperature spin transistor was produced with the use of the magnetic semiconductor/nonmagnetic semiconductor contact.
Cite this paper
A. Borukhovich, "Spin Transfer in EuO:Fe/GaAs Contact," Journal of Modern Physics, Vol. 4 No. 3, 2013, pp. 306-310. doi: 10.4236/jmp.2013.43041.
 А. S. Borukhovich, “Physics of Materials and Structures of Superconducting and Semiconducting Spin Electronics,” Ekaterinburg, UB RAS, 2004, 175 p. (in Russian)
 I. Zutic, J. Fabian and S. Das Sarma, “Spintronics: Fundamentals and Applications,” Reviews of Modern Physics, Vol. 76, No. 2, 2004, pp. 323-410.
 А. S. Borukhovich, “Spintronics of Semiconducting Systems,” Deposited VINITI 10.03.05, No. 322-В2005, 48 p. (in Russian)
 B. Huang, D. J. Monsma and I. J. Appelbaum, “Experimental Realization of a Silicon Spin Field-Effect Transistor,” Applied Physics Letters, Vol. 91, No. 7, 2007, Article ID: 072501.
 I. Appelbaum, B. Huang and D. J. Monsma, “Electronic Measurement and Control of Spin Transport in Silicon,” Nature, Vol. 447, 2007, pp. 295-298.
 A. S. Borukhovich, “Materials and Structures of the Semiconduction Spintronics,” Perspektivnye Materialy, No. 4, 2006, pp. 23-31. (in Russian)
 G. V. Lashkaryov, M. V. Radchenko, V. А.Karpina, V. I. Sichkovskii, “Diluted Magnetic Semiconductors as Materials for Spin Electronics,” Physics of the Low Temperature, Vol. 33, No. 2-3, 2007, pp. 228-238. (in Russian)
 G. D. Nipan, V. A. Ketsko, A. I. Stognii and N. T. J. Kuznetsov, “Materials Science Perspectives for Oxide Ferromagnetic Semiconductors,” Neorganicheskie Materialy, Vol. 46, No. 12, 2010, pp. 35-56. (in Russian)
 L. V. Lutsev, А. I. Stognii and N. N. Novitskii, “Giant Injection Magnetoresistance in Gallium Arsenide Heterostructures/Granular Films with Nanoscale Inclusions of Cobalt,” Pisma v ZhETF, Vol. 81, No. 10, 2005, pp. 636-639. (in Russian)
 E. L. Nagaev, “Physics of Magnetic Semiconductors,” Nauka, Moscow, 1979, p. 431. (in Russian)
 А. S. Borukhovich, N. I. Ignat’eva, A. I. Galyas, S. S. Dorofeychik and K. I. Yanushkevich, “Thin Film Ferromagnetic Composite Material for Spintronics,” Pisma v ZhETF, Vol. 84, No. 9, 2006, pp. 592-595. (in Russian)
 T. S. Altshuler, Yu. I. Goryunov and M. S. Bresler, “Ferromagnetic Odering of the Fe-Impurity in the Semiconductor with the Fluctuation Valence of SmB6,” ZhETF, Vol. 130, No. 4, 2006, pp. 729-736. (in Russian)
 A. S. Borukhovich, N. I. Ignat’eva, A. I. Galyas, O. F. Demidenko, Yu. A. Fedotova, A. I. Stognii and K. I. Yanushkevich, “Superparamagnetism of the Ferromagnetic Composite Material EuO:Fe for Spintronics,” Journal of Nanoelectronics and Optoelectronics, Vol. 3, No. 1, 2008, pp. 82-85.
 А. S. Borukhovich, N. I. Ignatyeva, K. I. Yanushkevich, А. I. Stognii and Yu. А. Fedotova, “Mossbauer Spectroscopy Study of the EuO:Fe Spintronic Material,” Pisma v ZhETF, Vol. 89, No. 4, 2009, pp. 215-218. (in Russian)
 А. S. Borukhovich, N. I. Ignatyeva, А. I. Galyas, K. I. Yanushkevich and А. I. Stognii, “Spin Transistor,” RF Patent No. 2387047, 2010. (in Russian).