ABSTRACT In this paper, we have investigated the design parameters of RF CMOS cells which will be used for switch in the wireless telecommunication systems. This RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. The results for the development of a cell-library which includes the basics of the circuit elements required for the radio frequency sub-systems of the integrated circuits such as V-I characteristics at low-voltages, contact resistance which is present in the switches and the potential barrier with contacts available in devices has been discussed.
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nullV. Srivastava, K. Yadav and G. Singh, "Designing Parameters for RF CMOS Cells," Circuits and Systems, Vol. 1 No. 2, 2010, pp. 49-53. doi: 10.4236/cs.2010.12008.
 Skyworks Solutions Inc., “Application Note, APN1002, Design with PIN Diodes,” Woburn, July 2005.
J. Park and Z. Q. Ma, “A 15 GHz CMOS RF Switch Employing Large Signal Impedance Matching,” Proceeding of Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Denver, 2006, p. 1-4.
M. Viranjay Srivastava, K. S. Yadav and G. Singh, “Ap-plication of VEE Pro Software for Measurement of MOS Device Parameter Using C-V Curve,” International Journal of Computer Applications, Vol. 1, No. 7, March 2010, pp. 43-46.
V. M. Srivastava, “Capacitance-Voltage Measurement for Characterization of a Metal Gate MOS Process,” Inter-national Journal of Recent Trends in Engineering, Vol. 1, No. 4, May 2009, pp. 4-7.
A. Litwin, E. Microelectron and A. B. Stockholm, “Overlooked Interfacial Silicide-Polysilicon Gate Resis- tance in MOS Transistors,” IEEE Transactions on Elec- tron Devices, Vol. 48, No. 9, September 2001, pp. 2179- 2181.
V. M. Srivastava, K. S. Yadav and G. Singh, “Attenuation with Double Pole Four Throw CMOS switch design,” IEEE International Conference on Semiconductor Elec- tronics (ICSE-2010), Malacca, 28-30 June 2010, pp. 173-175.
Y. J. Chan, C. H. Huang, C. C. Weng and B. K. Liew, “Characteristics of Deep Sub-Micrometer MOSFET and its Empirical Non-Linear RF Model,” IEEE Transaction on Microwave Theory, Vol. 46, No. 5, May 1998, pp. 611- 615.
J. P. Carmo, P. M. Mendes, C. Couto and J. H. Correia “A 2.4-GHz RF CMOS Transceiver for Wireless Sensor Applications,” Proceeding of International Conference on Electrical Engineering, Coimbra, 2005, pp. 902-905.
P. Mekanand and D. Eungdamorang, “DP4T CMOS Switch in a Transceiver of MIMO System,” Proceeding of 11th IEEE International Conference of Advanced Communication Technology, Korea, 2009, pp. 472-474.
P. H. Woerlee, M. J. Knitel, R. V. Langevelde, D. B. Klaassen, L. F. Tiemeijer and A. J. Scholten, “RF CMOS Performance Trends,” IEEE Transaction on Electron De-vices, Vol. 48, No. 8, August 2001, pp. 1776-1782.
T. H. Lee, “CMOS RF No Longer an Oxymoron,” Pro-ceedings of the 19th Gallium Arsenide Integrated Circuit Symposium, Anaheim, 1997, pp. 244-247.
V. M. Srivastava, K. S. Yadav and G. Singh, “Double Pole Four Throw Switch Design with CMOS Inverter,” Proceeding of 5th IEEE International Conference on Wireless Communication and Sensor Network, Kolkata, 15-19 December 2009, pp. 1-4.
S. Lee, C. Yoo, W. Kim, H. K. Ryu and W. Song, “1 GHz CMOS Down Conversion Mixer,” Proceeding of IEEE International Symposium on Consumer Electronics, Singapore, 1997, pp. 125-127.
T. H. Lin, H. Sanchez, R. Rofougaran and W. J. Kaiser, “CMOS Front End Components for Micropower RF Wireless Systems,” Proceeding of International Sym- posium on Low Power Electronics and Design, Monterey, California, 1998, pp. 11-15.
F. Piazza, P. Orsatti, Q. Huang and T. Morimoto, “0.25 mm CMOS Transceiver Front-End for GSM,” Procee- ding of IEEE Custom Integrated Circuits Conference, Singapore, 1998, pp. 413-416.
T. Manku, “Microwave CMOS device physics and design,” IEEE Journal of Solid State Circuits, vol. 34, no. 3, March 1999, pp. 277-285.
C. Laber, C. Rahim, S. Dreyer, G. Uehara, P. Kwok and P. Gray, “Design Considerations for a High Performance 3 Micron CMOS Analog Standard Cell Library,” IEEE Journal of Solid State Circuits, Vol. 22, No. 2, 1987, pp. 181-189.
Y. Cheng, and M. Matloubian, “Frequency Dependent Resistive and Capacitive Components in RF MOSFETs,” IEEE Electron Device Letters, Vol. 22, No. 7, July 2001, pp. 333-335.
K. J. Yang and C. Hu, “MOS Capacitance Measurements for High Leakage Thin Dielectrics,” IEEE Transaction on Electron Devices, Vol. 46, No. 7, July 1997, pp. 1500- 1501.
M. Smith, C. Portman, C. Anagnostopoulos, P. Tschang, R. Rao, P. Valdenaire and H. Ching, “Cell Libraries and Assembly Tools for Analog/Digital CMOS and BiCMOS ASIC Design,” IEEE Journal of Solid State Circuits, Vol. 24, No. 5, 1989, pp. 1419-1432.
S. H. Lee, C. S. Kim and H. K. Yu, “A Small Signal RF Model and its Parameter Extraction for Substrate Effects in RF MOSFETs,” IEEE Transaction on Electron Devices, Vol. 48, No. 7, July 2001, pp. 1374-1379.
N. Talwalkar, C. Patrick Yue and S. Simon Wong, “In-tegrated CMOS Transmit-Receive Switch Using LC- Tuned Substrate Bias for 2.4 GHz and 5.2 GHz Appli- cations,” IEEE Journal of Solid State Circuits, Vol. 39, No. 6, 1989, pp. 863-870.
V. M. Srivastava, K. S. Yadav and G. Singh, “Measure- ment of Oxide Thickness for MOS Devices, Using Simu-lation of SUPREM Simulator,” International Journal of Computer Applications, Vol. 1, No. 6, March 2010, pp. 66-70.
Y. Cheng and M. Matloubian, “Parameter Extraction of Accurate and Scaleable Substrate Resistace Components in RF MOSFETs,” IEEE Electron Device Letters, Vol. 23, No. 4, April 2002, pp. 221-223
Y. S. Lin, S. S. Lu, T. S. Lee and H. B. Liang, “Charac- terization and Modeling of Small Signal Substrate Resis- tance Effect in RF CMOS,” IEEE MTT-S Digest, June 2002, pp. 161-164,
S. M. Sze, “Semiconductor Devices: Physics and Tech- nology,” 2nd Edition, Tata McGraw Hill, Noida, 2004.
V. M. Srivastava, “Relevance of VEE Programming for Measurement of MOS Device Parameters,” Proceedings of IEEE International Advance Computing Conference, Patiala, March 2009, pp. 205-209.