Growing of InGaSe2 single crystals has been carried out by employing the Brijman-Stockbargor methods. On the base of X-ray-analysis it has been found that the given phase is crystallized into tetragonal symmetry. The temperature dependence of electric conductivity has been studied. Band structure has been computed. Optical functions, effective masses of electrons and holes have been calculated. Origin of formation of valence and conductance bands as well as the width of forbidden band for InGaSe2 have been determined.
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