[1] M.Q. Wang, Q. Xie, Q. Luo, “Review on Doped β-FeSi2 ” Mater. Sci. A, 25 (2011) 26-30.
[2] Z.J. Pan, “Study of Electronic Structure of Thermoelectric Material – Effects of Doping on Thernoelectric Properties of Single Crystla Material” PH.D. Thesis, Shanghai Jiaotong University, Shanghai, 2007.
[3] W.J. Yan, “The calculation of Band Structure and electronic and optical properties ofβ-FeSi2” PH.D. Thesis, Guizhou University, 2007.
[4] D.M. Rowe, CRC Handbook of Thermoelec-trics, CRC press, New York, 1995.
[5] N.K. Liu, B.S.Zhu, J.S. Luo, Semiconductor Physics, Electronic industry press, Beijing, 2008
[6] S.I. Kurganskil, N.S. Pereslavtseva, “ ” Phys. Solid State. 44 (2002) 704-711.
[7] Z.J. Pan, L.T. Zhang, J.S. Wu, “A First-principle study of electronic and geometrical struc-tures of semiconducting β-FeSi2 with doping” Acta. Phys. Sin. 54 (2005) 5208-5313
[8] J. Tani, H. Kido, “First Principle study of native point defects in β-FeSi2” J. Al-loys and Comp. 352 (2003) 153-157.
[9] X.Y. Jiang, “The structure and thermoelectronical properties of β-FeSi2 prepared by laser induced CVD ” Jpn. Appl.Phys.45 (2006) 1351.