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 AMPC  Vol.2 No.4 , December 2012
Preparation of High Ga Content Cu(In,Ga)Se2 Thin Films by Sequential Evaporation Process Added In2S3
Abstract: High Ga content Cu(In,Ga)Se2 thin films incorporated sulfur were prepared by sequential evaporation from CuGaSe2 and CuInSe2 ternary compounds and subsequently Ga2Se3, In2Se3 and In2S3 binary compounds. The In2S3/(Ga2Se3+ In2Se3) ratio was varied from 0 to 0.13, and the properties of the thin films were investigated. XRD studies demonstrated that the prepared thin films had a chalcopyrite Cu(In,Ga)Se2 structure. The S/(Se+S) mole ratio in the thin films was within the range from 0 to 0.04. The band gaps of Cu(In,Ga)Se2 thin films increased from 1.30 eV to 1.59 eV with increasing the  In2S3 /(Ga2Se3+ In2Se3) ratio.
Cite this paper: T. Yamaguchi, K. Tsujita, S. Niiyama and T. Imanishi, "Preparation of High Ga Content Cu(In,Ga)Se2 Thin Films by Sequential Evaporation Process Added In2S3," Advances in Materials Physics and Chemistry, Vol. 2 No. 4, 2012, pp. 106-109. doi: 10.4236/ampc.2012.24B029.
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