ABSTRACT High Ga content Cu(In,Ga)Se2 thin films incorporated sulfur were prepared by sequential evaporation from CuGaSe2 and CuInSe2 ternary compounds and subsequently Ga2Se3, In2Se3 and In2S3 binary compounds. The In2S3/(Ga2Se3+ In2Se3) ratio was varied from 0 to 0.13, and the properties of the thin films were investigated. XRD studies demonstrated that the prepared thin films had a chalcopyrite Cu(In,Ga)Se2 structure. The S/(Se+S) mole ratio in the thin films was within the range from 0 to 0.04. The band gaps of Cu(In,Ga)Se2 thin films increased from 1.30 eV to 1.59 eV with increasing the In2S3 /(Ga2Se3+ In2Se3) ratio.
Cite this paper
T. Yamaguchi, K. Tsujita, S. Niiyama and T. Imanishi, "Preparation of High Ga Content Cu(In,Ga)Se2 Thin Films by Sequential Evaporation Process Added In2S3," Advances in Materials Physics and Chemistry, Vol. 2 No. 4, 2012, pp. 106-109. doi: 10.4236/ampc.2012.24B029.
 T. Yamaguchi, J. Matsufusa and A. Yoshida, Jpn. J. Appl. Phys. 31, 1992, pp. L703-L705.
 P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann and M. Powalla, Prog. Photovolt. Res. Appl., 2011, DOI: 10.1002/pip.1078.
 I. Repins, M. A. Contreras, B. Egaas, C. DeHart, J. Scharf, C.L. Perkins, B. To and R. Noufi, Prog. Photovolt. Res. Appl. 16, 2008, pp. 235-239.
 M. A. Contreras, K. Ramanathan, J. AbuShama, F. Hasoon, D. L. Young, B. Egaas and R. Noufi, Prog. Photovolt. Res. Appl. 13, 2005, pp. 209-216.
 T. Wada, Y. Hashimoto, S. Nishiwaki, T. Satoh, S. Hayashi, T. Negami and H. Miyake, Solar Energy Materials and Solar Cells 67, 2001, pp. 305-310.
 D. Ohashi, T. Nakada and A. Kunioka, Solar Energy Materials and Solar Cells 67, 2001, pp.261-265.
 T. Yamaguchi, M. Naka, S. Niiyama and T. Imanishi, J. Physics and Chemistry of Solids 66, 2005, Issue 11, pp.2000-2003.
 T. Yamaguchi, Y. Asai, K. Yufune, S. Niiyama and T. Imanishi, Phys. Status Solidi C 6, No. 5, 2009, pp.1229-1232.
 T. Yamaguchi, Y. Asai, S. Niiyama, T. Imanishi, Proc. of 2011 World Congress on Engineering and Technology (Shanghai, Oct.28-30, 2011, IEEE) Vol. 4, pp.601-604.
 J. I. Goldstein, D. E. Newbury, P. Echlin, D. C. Joy, C. Fiori and E. Lifshin: Scanning Electron Microscopy and X-ray Microanalysis, Plenum Press, New York, 1981.
 G. Zoppi, I. Forbes, R. W. Miles, P. J. Dale, J. J. Scragg and L. M. Peter, Prog. Photovolt. Res. Appl. 17, 2009, pp.315-319.
 P. D. Paulson, R. W. Birkmire and W. N. Shafarman, J. Appl. Phys. 94, 2003, pp.879-888.
 M. A. Contreras, B. Egaas, K. Ramanathan, J. Hiltner, A. Swartzlander, F. Hasoon and R. Noufi, Prog. Photovolt. Res. Appl. 7, 1999, pp.311-316.
 T. Yagioka and T. Nakada, Appl. Phys. Express 2, 2009, 072201