Java Simulation of Au Diffusion in Si Affected by Vacancies and Self-Interstitials: Partial Differential Equations

Masami Morooka^{*}

Show more

References

[1] M. Morooka, H. Tomokage, H. Kitagawa and M. Yoshida, “Three States of Substitutional Gold in Silicon,” Japanese Journal of Applied Physics, Vol. 24, No. 2, 1985, pp. 133-136.

[2] W. C. Dash, “Gold-Induced Climb of Dislocations in Silicon,” Journal of Applied Physics, Vol. 31, No. 12, 1960, pp. 2275-2283.

[3] U. Gosele, W. Frank and A. Seeger, “Mechanism and Kinetics of the Diffusion of Gold in Silicon,” Applied Physics, Vol. 23, No. 4, 1980, pp. 361-368.

[4] M. Morooka and M. Yoshida, “Boundary and Initial Conditions of Approximate Diffusion Equation for Gold in Silicon,” Japanese Journal of Applied Physics, Vol. 28, No. 3, 1989, pp. 457-463.

[5] H. Mehrer, “Diffusion in Solids,” Springer-Verlag, Berlin, 2007.

[6] M. Morooka and T. Kajiwara, “Indiffusion and Out-Diffusion Profiles of Substitutional Au in Si Affected by Self-Interstitials and Vacancies,” Japanese Journal of Applied Physics, Vol. 42, No. 6, 2003, pp. 3311-3315.

[7] M. Morooka, “Java Programming for Numerical Solution of Nonlinear Diffusion Equation (Dissociative and Kick- Out Mechanisms), Research Bulletin of Fukuoka Institute of Technology, Vol. 35, No. 1, 2002, pp. 1-11.

[8] M. Schulz, “Diffusion of Impurities,” In: M. Schulz, Ed., Impurities and Defects in Group IV Elements and III-V Compounds, Spring-Verlag, Berlin, 1989, pp. 250-262.

[9] A. C. Damask and G. J. Dienes, “Point Defects in Metals,” Gordon and Breach, London, 1963.

[10] C. B. Collins, R. O. Carlson and C. J. Gallagher, “Properties of Gold-Doped Silicon,” Physical Review, Vol. 105, No. 4, 1957, pp. 1168-1173.

[11] W. R. Willcox and T. J. LaChapelle, “Mechanism of Gold Diffusion into Silicon,” Journal of Applied Physics, Vol. 35, No. 1, 1964, pp. 240-246.

[12] W. Zulehner, “Impurities and Defects in Group IV Elements and III-V Compounds,” Springer, Berlin, 1989.

[13] W. Frank, U. G?sele, H. Mehrer and A. Seeger, “Diffusion in Silicon and Germanium,” In: G. E. Murch and A. S. Nowick, Eds., Diffusion in Crystaline Solids, Academic Press Inc., Orlando, 1984, pp. 129-134.

[14] F. J. Demond, S. Kalbitzer, H. Mannsperger and H. Damjantschitsch, “Study of Si Self-Diffusion by Nuclear Techniques,” Physics Letters A, Vol. 93, No. 9, 1983, pp. 503-506.

[15] B. J. Masters and E. F. Gorey, “Photon-Enhanced Diffusion and Vacancy Migration in Silicon,” Journal of Applied Physics, Vol. 49, No. 5, 1978, pp. 2717-2724.

[16] T. Y. Tan and U. Gosele, “Point Defects, Diffusion Processes, and Swirl Defect Formation in Silicon,” Physics and Astronomy, Vol. 37, No. 1, 1985, pp. 1-17.

[17] M. Morooka, Y. Nakabayashi and S. Matsumoto, “Effect of Surface Condition on the Solid Solubility of Substitutional Gold in the Out-Diffusion of Supersaturated Gold in Silicon,” Defect and Diffusion Forum, Vol. 194-199, 2001, pp. 623-628.

[18] V. V. Voronkov, “The Mechanism of Swirl Defects Formation in Silicon,” Journal of Crystal Growth, Vol. 59, No. 3, 1982, pp. 625-643.