Calibration of GaAlAs Semiconductor Diode
ABSTRACT
The forward voltage of GaAlAs semiconductor diode has been measured in the temperature range 50 K - 300 K and for current values between 10 nA and 450 μA. The forward voltage as a function of temperature is least-squares fitted and the coefficients are given. The 1st and 2nd order least-squares fitting has high temperature root between 400 K and 950 K. The presence of the high temperature root indicates that the fitted polynomials are of similar character. The high temperature root is found to increase for the least squares fitted polynomials corresponding to higher current values.
The forward voltage of GaAlAs semiconductor diode has been measured in the temperature range 50 K - 300 K and for current values between 10 nA and 450 μA. The forward voltage as a function of temperature is least-squares fitted and the coefficients are given. The 1st and 2nd order least-squares fitting has high temperature root between 400 K and 950 K. The presence of the high temperature root indicates that the fitted polynomials are of similar character. The high temperature root is found to increase for the least squares fitted polynomials corresponding to higher current values.
Cite this paper
S. Ota and S. Ota, "Calibration of GaAlAs Semiconductor Diode," Journal of Modern Physics, Vol. 3 No. 10, 2012, pp. 1490-1493. doi: 10.4236/jmp.2012.310184.
S. Ota and S. Ota, "Calibration of GaAlAs Semiconductor Diode," Journal of Modern Physics, Vol. 3 No. 10, 2012, pp. 1490-1493. doi: 10.4236/jmp.2012.310184.
References
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[1] H. Harris, “Concerning a Thermometer Made with Solid-State Diodes,” Scientific American, Vol. 204, No. 6, 1961, p. 192. [2] A. G. McNamara, “Semiconductor Diodes and Transistors as Electrical Thermometers,” Review of Scientific Instruments, Vol. 33, No. 3, 1962, pp. 330-333. doi:10.1063/1.1717834 [3] B. G. Cohen, W. B. Snow and A. R. Tretola, “GaAs p-n Junction Diodes for Wide Range Thermometry,” Review of Scientific Instruments, Vol. 34, No. 10, 1963, pp. 1091-1093. doi:10.1063/1.1718140 [4] J. Unsworth and A. C. Rose-Innes, “Silicon p-n Junctions as Low Temperature Thermometers,” Cryogenics, Vol. 6, No. 4, 1966, pp. 239-240. doi:10.1016/0011-2275(66)90101-9 [5] G. K. White, “Experimental Techniques in Low-Temperature Physics,” Clarendon Press, Oxford, 1979, p. 115. [6] C. T. Saha, R. N. Noyce and W. Shockley, “Carrier Generation and Recombination in p-n Junctions and p-n Junction Characteristics,” Proceedings of the IRE, Vol. 45, No. 9, 1957, pp. 1228-1243. doi:10.1109/JRPROC.1957.278528 [7] S. B. Ota and S. Ota, “A Study of Forward Characteristics of a GaAlAs Temperature Sensor Diode,” Measurement Science and Technology, Vol. 11, No. 6, 2000, p. 815. doi:10.1088/0957-0233/11/6/327 [8] S. B. Ota and S. Ota, “Thermometry between 10 - 300 K Using GaAlAs Diode,” Modern Physics Letter B, Vol. 14, No. 11, 2000, p. 393. doi:10.1142/S0217984900000549 [9] S. B. Ota, J. Bascuňán and S. Ota, “Low Temperature Characteristic of GaAlAs TEmperature Sensor Diode,” Modern Physics Letter B, Vol. 15, No. 9, 2001, p. 319. doi:10.1142/S0217984901001744 [10] J. Verperk and P. Strnad, “Stability of Silicon Diodes as Temperature Sensors in the Range 4.2 - 273 K,” Cryogenics, Vol. 24, 1984, pp. 245-248. [11] E. Gmelin and W. Heinke, “Cryostat for Spatial and Spectral Luminescence Experiments,” Cryogenics, 1976, pp. 614-615. [12] Yu. M. Shwarts, et al., “Radiation-Resistant Silicon Diode Temperature Sensors,” Sensors and Actuators A: Physical, Vol. 97-98, 2002, pp. 271-279. doi:10.1016/S0924-4247(01)00874-3 [13] V. L. Borblik, et al., “About Manifestation of the Piezojunction Effect in Diode Temperature Sensors,” Semi. Phys. Quantum Elec. Optoelec., Vol. 6, No. 1, 2003, pp. 97-101. [14] V. N. Sokolov and Yu. M. Shwarts, “Effect of Nonuniform Doping Profile on Thermometric Performance of Diode Temperature Sensors,” Semi. Phys. Quantum Elec. Optoelec., Vol. 5, No. 2, 2002, pp. 201-211. [15] P. S. Iskrenovic and D. B. Mitic, “Assortment of Optimal Conditions for Running the Impulse Diode Thermometer,” Review of Scientific Instruments, Vol. 65, No. 2, 1994, p. 477. doi:10.1063/1.1145160 [16] P. S. Iskrenovic, “Systematic Error of Diode Thermometer,” Review of Scientific Instruments, Vol. 80, No. 8, 2009, Article ID: 084901. doi:10.1063/1.3202102 [17] E. Gmelin and K. Ripka, “A Simple Versatile Sample Holder of Low Heat Capacity for Adiabetic Calorimetry,” Cryogenics, Vol. 21, No. 2, 1981, pp. 117-118. doi:10.1016/0011-2275(81)90061-8 [18] S. B. Ota and S. Ota, “On the Ideality Factor of the GaAlAs Semiconductor Diode below Knee Voltage,” Modern Physics Letter B, Vol. 21, No. 19, 2007, p. 1235. doi:10.1142/S0217984907013602 [19] S. Yoshida, et al., “Microscopic Basis for the Mechanism of Carrier Dynamics in an Operating p-n Junction Examined by Using Light-Modulated Scanning Tunneling Spectroscopy,” Physical Review Letters, Vol. 98, No. 2, 2007, Article ID: 26802. doi:10.1103/PhysRevLett.98.026802 [20] L. Kirkup, et al., “Effect of Injection Current on the Repeatability of Laser Diode Junction Voltage-Temperature Measurements,” Journal of Applied Physics, Vol. 101, No. 2, 2007, Article ID: 23118. doi:10.1063/1.2427097