S. B. Ota^*, Smita Ota

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Institute of Physics, Bhubaneswar, India.
DST Project, DST, New Delhi, India.
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Abstract: The forward voltage of GaAlAs semiconductor diode has been measured in the temperature range 50 K - 300 K and for current values between 10 nA and 450 μA. The forward voltage as a function of temperature is least-squares fitted and the coefficients are given. The 1st and 2nd order least-squares fitting has high temperature root between 400 K and 950 K. The presence of the high temperature root indicates that the fitted polynomials are of similar character. The high temperature root is found to increase for the least squares fitted polynomials corresponding to higher current values.

Keywords: Semiconductor; Temperature Sensors; GaAlAs

Cite this paper: S. Ota and S. Ota, "Calibration of GaAlAs Semiconductor Diode," Journal of Modern Physics, Vol. 3 No. 10, 2012, pp. 1490-1493. doi: 10.4236/jmp.2012.310184.

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