[1] H. Harris, “Concerning a Thermometer Made with Solid-State Diodes,” Scientific American, Vol. 204, No. 6, 1961, p. 192.
[2] A. G. McNamara, “Semiconductor Diodes and Transistors as Electrical Thermometers,” Review of Scientific Instruments, Vol. 33, No. 3, 1962, pp. 330-333. doi:10.1063/1.1717834
[3] B. G. Cohen, W. B. Snow and A. R. Tretola, “GaAs p-n Junction Diodes for Wide Range Thermometry,” Review of Scientific Instruments, Vol. 34, No. 10, 1963, pp. 1091-1093. doi:10.1063/1.1718140
[4] J. Unsworth and A. C. Rose-Innes, “Silicon p-n Junctions as Low Temperature Thermometers,” Cryogenics, Vol. 6, No. 4, 1966, pp. 239-240. doi:10.1016/0011-2275(66)90101-9
[5] G. K. White, “Experimental Techniques in Low-Temperature Physics,” Clarendon Press, Oxford, 1979, p. 115.
[6] C. T. Saha, R. N. Noyce and W. Shockley, “Carrier Generation and Recombination in p-n Junctions and p-n Junction Characteristics,” Proceedings of the IRE, Vol. 45, No. 9, 1957, pp. 1228-1243. doi:10.1109/JRPROC.1957.278528
[7] S. B. Ota and S. Ota, “A Study of Forward Characteristics of a GaAlAs Temperature Sensor Diode,” Measurement Science and Technology, Vol. 11, No. 6, 2000, p. 815. doi:10.1088/0957-0233/11/6/327
[8] S. B. Ota and S. Ota, “Thermometry between 10 - 300 K Using GaAlAs Diode,” Modern Physics Letter B, Vol. 14, No. 11, 2000, p. 393. doi:10.1142/S0217984900000549
[9] S. B. Ota, J. Bascuňán and S. Ota, “Low Temperature Characteristic of GaAlAs TEmperature Sensor Diode,” Modern Physics Letter B, Vol. 15, No. 9, 2001, p. 319. doi:10.1142/S0217984901001744
[10] J. Verperk and P. Strnad, “Stability of Silicon Diodes as Temperature Sensors in the Range 4.2 - 273 K,” Cryogenics, Vol. 24, 1984, pp. 245-248.
[11] E. Gmelin and W. Heinke, “Cryostat for Spatial and Spectral Luminescence Experiments,” Cryogenics, 1976, pp. 614-615.
[12] Yu. M. Shwarts, et al., “Radiation-Resistant Silicon Diode Temperature Sensors,” Sensors and Actuators A: Physical, Vol. 97-98, 2002, pp. 271-279. doi:10.1016/S0924-4247(01)00874-3
[13] V. L. Borblik, et al., “About Manifestation of the Piezojunction Effect in Diode Temperature Sensors,” Semi. Phys. Quantum Elec. Optoelec., Vol. 6, No. 1, 2003, pp. 97-101.
[14] V. N. Sokolov and Yu. M. Shwarts, “Effect of Nonuniform Doping Profile on Thermometric Performance of Diode Temperature Sensors,” Semi. Phys. Quantum Elec. Optoelec., Vol. 5, No. 2, 2002, pp. 201-211.
[15] P. S. Iskrenovic and D. B. Mitic, “Assortment of Optimal Conditions for Running the Impulse Diode Thermometer,” Review of Scientific Instruments, Vol. 65, No. 2, 1994, p. 477. doi:10.1063/1.1145160
[16] P. S. Iskrenovic, “Systematic Error of Diode Thermometer,” Review of Scientific Instruments, Vol. 80, No. 8, 2009, Article ID: 084901. doi:10.1063/1.3202102
[17] E. Gmelin and K. Ripka, “A Simple Versatile Sample Holder of Low Heat Capacity for Adiabetic Calorimetry,” Cryogenics, Vol. 21, No. 2, 1981, pp. 117-118. doi:10.1016/0011-2275(81)90061-8
[18] S. B. Ota and S. Ota, “On the Ideality Factor of the GaAlAs Semiconductor Diode below Knee Voltage,” Modern Physics Letter B, Vol. 21, No. 19, 2007, p. 1235. doi:10.1142/S0217984907013602
[19] S. Yoshida, et al., “Microscopic Basis for the Mechanism of Carrier Dynamics in an Operating p-n Junction Examined by Using Light-Modulated Scanning Tunneling Spectroscopy,” Physical Review Letters, Vol. 98, No. 2, 2007, Article ID: 26802. doi:10.1103/PhysRevLett.98.026802
[20] L. Kirkup, et al., “Effect of Injection Current on the Repeatability of Laser Diode Junction Voltage-Temperature Measurements,” Journal of Applied Physics, Vol. 101, No. 2, 2007, Article ID: 23118. doi:10.1063/1.2427097