ABSTRACT From the analysis of the frequently models of mobility used in the literature, we determine by an identification method the temperature coefficients α and β of a silicon resistance doped with donor atoms. Their variations show a non linear dependence according to the doping and the existence of a minimal value at particular concentration. Moreover, the comparison between the obtained results and those of a P-type resistance shows that there is a strong similarity in their thermal behaviours, except for a particular couple of α and β.
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