[1] B. Hadjoudja and A. Chibani, “Global Model for Electrical Conduction in Polysilicon Layers,” Annales de Chimie—Science des Matériaux, Vol. 31, No. 1, 2006, pp. 121-134. doi:10.3166/acsm.31.121-134
[2] S. Honda, T. Mates, M. Ledinsky, J. Oswald, A. Fejfar, J. Koeka, T. Yamazaki, Y. Uraoka and T. Fuyuki, “Effect of Hydrogen Passivation on Polycrystalline Silicon Thin Films,” Thin Solid Films, Vol. 487, No. 1-2, 2005, pp. 152-156. doi:10.1016/j.tsf.2005.01.056
[3] A. Haddad, T. Inokuma, Y. Kurata and S. Hasegawa, “Characterization of Structure and Role of Different Textures in Polycrystalline Si Films,” Journal of Non-Crystalline Solids, Vol. 351, No. 24-26, 2005, pp. 2107-2114. doi:10.1016/j.jnoncrysol.2005.05.007
[4] D. D. Malinovska, O. Angelov, M. S. Vassileva, M. Ka- menova and J. C. Pivin, “Polycrystalline Silicon Thin Films on Glass Substrate,” Thin Solid Films, Vol. 451- 452, 2004, pp. 303-307. doi:10.1016/j.tsf.2003.11.054
[5] A. Slaoui, E. Pihan, I. Ka, N. A. Mbow, S. Roques and J. M. Koebel, “Passivation and Etching of Fine-Grained Polycrystalline Silicon Films by Hydrogen Treatment,” Solar Energy Materials & Solar Cells, Vol. 90, No. 14, 2006, pp. 2087-2098. doi:10.1016/j.solmat.2006.02.004
[6] B. Ai, H. Shen, Z. Liang, Z. Chen, G. Kong and X. Liao, “Electrical Properties of B-Doped Polycrystalline Silicon Thin Films Prepared by Rapid Thermal Chemical Vapour Deposition,” Thin Solid Films, Vol. 497, No. 1-2, 2006, pp. 157-162. doi:10.1016/j.tsf.2005.10.069
[7] R. Mahamdi, F. Mansour, E. Scheid, B. T. Boyer and L. Jalabert, “Boron Diffusion and Activation during Heat Treatment in Heavily Doped Polysilicon Thin Films for P+ Metal-Oxide-Semiconductor Transistors Gates,” Japanese Journal of Applied Physics, Vol. 40, 2001, pp. 6723- 6727. doi:10.1143/JJAP.40.6723
[8] J. Y. W. Seto, “The electrical properties of polycrystalline silicon films,” Journal of Applied Physics, Vol. 46, No. 12, 1975, pp. 5247-5254. doi:10.1063/1.321593
[9] B. Hadjoudja, A. Chibani, R. Zeggari and B. Chouial, “Modélisation des Variations de la Résistivité des Couches de Silicium Polycristallin,” Physical & Chemical News, Vol. 13, 2003, pp. 85-90.
[10] M. M. Mandurah, K. C. Saraswat and T. I. Kamins, “A Model for Conduction in Polycrystalline Silicon—Part I: Theory,” IEEE Transactions on Electron Devices, Vol. 28, No. 10, 1981, pp. 1163-1171. doi:10.1109/T-ED.1981.20504
[11] L. Mei and R. W. Dutton, “A Process Simulation Model for Multilayer Structures Involving Polycrystalline Silicon,” IEEE Transactions on Electron Devices, Vol. 29, No. 11, 1982, pp. 1726-1734. doi:10.1109/T-ED.1982.21017
[12] J. Murota and T. Sawai “Electrical Characteristics of Heavily Arsenic and Phosphorus Doped Polycrystalline Silicon,” Journal of Applied Physics, Vol. 53, No. 5, 1982, pp. 3702-3708. doi:10.1063/1.331157